參數(shù)資料
型號： TE28F128J3C-150
廠商： INTEL CORP
元件分類： DRAM
英文描述： Intel StrataFlash Memory (J3)
中文描述： 8M X 16 FLASH 2.7V PROM, 150 ns, PDSO56
封裝： 14 X 20 MM, TSOP-56
文件頁數(shù)： 55/72頁
文件大?。?/td> 905K
代理商： TE28F128J3C-150
256-Mbit J3 (x8/x16)
Datasheet
55
A.5
System Interface Information
The following device information can optimize system interface software.
A.6
Device Geometry Definition
This field provides critical details of the flash device geometry.
0000h means no second vendor-specified algorithm exists
Secondary algorithm Extended Query Table address.
0000h means none exists
18:
19:
1A:
--00
--00
--00
19h
2
Table 27. CFI Identification (Sheet 2 of 2)
Offset
Length
Description
Add.
Hex
Code
Value
Table 28. System Interface Information
Offset
Length
Description
Add.
Hex
Code
Value
1Bh
1
V
logic supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
V
logic supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
V
PP
[programming] supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
V
[programming] supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
“n” such that typical single word program time-out = 2
n
μs
“n” such that typical max. buffer write time-out = 2
n
μs
“n” such that typical block erase time-out = 2
n
ms
“n” such that typical full chip erase time-out = 2
n
ms
“n” such that maximum word program time-out = 2
n
times
typical
“n” such that maximum buffer write time-out = 2
n
times typical
“n” such that maximum block erase time-out = 2
n
times typical
“n” such that maximum chip erase time-out = 2
n
times typical
1B:
--27
2.7 V
1Ch
1
1C:
--36
3.6 V
1Dh
1
1D:
--00
0.0 V
1Eh
1
1E:
--00
0.0 V
1Fh
20h
21h
22h
1
1
1
1
1F:
20:
21:
22:
--08
--08
--0A
--00
256 μs
256 μs
1 s
NA
23h
1
23:
--04
2 ms
24h
25h
26h
1
1
1
24:
25:
26:
--04
--04
--00
2 ms
16 s
NA
Table 29. Device Geometry Definition (Sheet 1 of 2)
Offset
Length
Description
Code See Table
Below
27:
27h
1
“n” such that device size = 2
n
in number of bytes
28h
2
Flash device interface: x8 async x16 async x8/x16 async
28:
--02
x8/
x16
28:00,29:00 28:01,29:00 28:02,29:00
“n” such that maximum number of bytes in write buffer = 2
n
29:
2A:
2B:
--00
--05
--00
2Ah
2
32
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F128J3C150-MTD 制造商:Intel 功能描述:ITLTE28F128J3C150-MTD 128MEG STRATA FLAS
TE28F128J3C150SL759 功能描述:IC FLASH 128MBIT 150NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040
TE28F128J3D75 制造商:Intel 功能描述: 制造商:INTELC 功能描述:
TE28F128J3D-75 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:Numonyx? Embedded Flash Memory (J3 v. D)
TE28F128J3D75A 功能描述:IC FLASH 128MBIT 75NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
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