參數(shù)資料
型號(hào)： TE28F020-150
廠商： INTEL CORP
元件分類： DRAM
英文描述： 28F020 2048K (256K X 8) CMOS FLASH MEMORY
中文描述： 256K X 8 FLASH 12V PROM, 150 ns, PDSO32
封裝： 0.310 X 0.720 INCH, TSOP-32
文件頁(yè)數(shù)： 27/38頁(yè)
文件大小： 878K
代理商： TE28F020-150
E
28F020
27
Output
0.8
Test Points
Input
2.0
2.0
0.8
2.4
0.45
0245_06
AC test inputs are driven at V
(2.4 V
) for a Logic
“1”
and V
(0.45 V
) for a Logic “0.” Input timing begins at
V
(2.0 V
) and V
(0.8 V
). Output timing ends at V
IH
and V
IL
. Input rise and fall times (10% to 90%)
<
10 ns.
Figure 6. Testing Input/Output Waveform
(1)
Device
Under Test
Out
R
L
= 3.3 k
1N914
1.3V
C
L
= 100 pF
0245_07
C
L
Includes Jig Capacitance
Figure 7. AC Testing Load Circuit
(1)
Output
Test Points
Input
1.5
3.0
0.0
1.5
0245_08
AC test inputs are driven at 3.0 V for a Logic “1” and 0.0 V
for a Logic “0.” Input timing begins, and output timing ends,
at 1.5 V. Input rise and fall times (10% to 90%)
<
10 ns.
Figure 8. High Speed AC Testing Input/Output
Waveforms
(2)
Device
Under Test
Out
R
L
= 3.3 k
1N914
1.3V
C
L
= 30 pF
0245_09
C
L
Includes Jig Capacitance
Figure 9. High Speed AC Testing Load Circuit
(2)
NOTES:
1.
2.
Testing characteristics for 28F020-70 in standard configuration, and 28F020-90 and 28F020-150.
Testing characteristics for 28F020-70 in high speed configuration.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F020-90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY
TE28F032B3B110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F032B3B90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F032B3BA110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F032B3BA90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
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