參數(shù)資料
型號: TE28F020-150
廠商: INTEL CORP
元件分類: DRAM
英文描述: 28F020 2048K (256K X 8) CMOS FLASH MEMORY
中文描述: 256K X 8 FLASH 12V PROM, 150 ns, PDSO32
封裝: 0.310 X 0.720 INCH, TSOP-32
文件頁數(shù): 17/38頁
文件大?。?/td> 878K
代理商: TE28F020-150
E
28F020
17
Table 4. 28F020 Typical Update Power Dissipation
(4)
Operation
Notes
Power Dissipation (Watt-Seconds)
Array Program/Program Verify
1
0.34
Array Erase/Erase Verify
2
0.37
One Complete Cycle
3
1.05
NOTES:
1.
Formula to calculate typical Program/Program Verify Power = [V
PP
x # Bytes typical # Prog Pulse (t
× I
PP2
typical +
t
WHGL
× I
PP4
typical)] + [V
CC
× # Bytes × typical # Prog Pulses (t
WHWH1
× I
CC2
typical + t
WHGL
× I
CC4
typical)].
Formula to calculate typical Erase/Erase Verify Power = [V
(I
typical × t
ERASE
typical + I
PP5
typical × t
WHGL
× # Bytes)]
+ [V
CC
(I
CC3
typical × t
ERASE
typical + I
CC5
typical × t
WHGL
× # Bytes)].
One Complete Cycle = Array Preprogram + Array Erase + Program.
“Typicals” are not guaranteed but based on a limited number of samples from 28F020-150 production lots.
2.
3.
4.
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