參數(shù)資料
型號: TE28F004B3B110
廠商: INTEL CORP
元件分類: DRAM
英文描述: 3 Volt Advanced Boot Block Flash Memory
中文描述: 512K X 8 FLASH 3V PROM, 110 ns, PDSO40
封裝: 10 X 20 MM, TSOP-40
文件頁數(shù): 6/58頁
文件大小: 920K
代理商: TE28F004B3B110
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
vi
3UHOLPLQDU\
-008
4-Mbit packaging and addressing information corrected throughout document
-009
Corrected 4-Mbit memory addressing tables in Appendices D and E
-010
Max I
changed to 25 μA
V
CC
Max on 32 M (28F320B3) changed to 3.3 V
Added 64-Mbit density and faster speed offerings
Removed access time vs. capacitance load curve
-011
-012
Changed references of 32Mbit 80ns devices to 70ns devices to reflect the faster product
offering.
Changed VccMax=3.3V reference to indicate the affected product is the 0.25
μ
m 32Mbit
device.
Minor text edits throughout document.
Number
Description
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F004B3B90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
TE28F004B3T110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
TE28F004B3T90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
TE28F004B5B80 制造商:Intel 功能描述:
TE28F004BEB120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY