參數(shù)資料
型號: TE28F004B3B110
廠商: INTEL CORP
元件分類: DRAM
英文描述: 3 Volt Advanced Boot Block Flash Memory
中文描述: 512K X 8 FLASH 3V PROM, 110 ns, PDSO40
封裝: 10 X 20 MM, TSOP-40
文件頁數(shù): 38/58頁
文件大?。?/td> 920K
代理商: TE28F004B3B110
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
32
3UHOLPLQDU\
0580_08
NOTES:
1. CE# must be toggled low when reading Status Register Data. WE# must be inactive (high) when reading
Status Register Data.
A. V
Power-Up and Standby.
B. Write Program or Erase Setup Command.
C. Write Valid Address and Data (for Program) or Erase Confirm Command.
D. Automated Program or Erase Delay.
E. Read Status Register Data (SRD): reflects completed program/erase operation.
F.Write Read Array Command.
Figure 8. AC Waveform: Program and Erase Operations
ADDRESSES [A]
CE#(WE#) [E(W)]
OE# [G]
WE#(CE#) [W(E)]
DATA [D/Q]
RP# [P]
IH
V
IL
V
V
IH
IL
V
V
IH
IL
V
IH
V
IL
V
IL
V
IL
V
IN
D
IN
A
IN
A
Valid
SRD
IN
D
IH
V
High Z
IH
V
IL
V
V [V]
PPH
V
V
PPLK
V
PPH
1
2
WP#
IL
V
IH
V
IN
D
A
B
C
D
E
F
W8
W6
W9
W3
W4
W7
W1
W5
W2
W10
W11
(Note 1)
(Note 1)
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