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參數(shù)資料
| 型號(hào)： | TE28F001BX-T150 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 中文描述： | 128K X 8 FLASH 12V PROM, 150 ns, PDSO32 |
| 封裝： | 8 X 20 MM, 1.20 MM HEIGHT, TSOP-32 |
| 文件頁數(shù)： | 17/33頁 |
| 文件大?。?/td> | 436K |
| 代理商： | TE28F001BX-T150 |
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28F001BX-T/28F001BX-B
DC CHARACTERISTICS
(Continued)
V
CC
e
5.0V
g
10%, T
A
e
0
§
C to
a
70
§
C
Symbol
Parameter
Notes Min Typ
Max
Unit
Test Conditions
I
CCR
V
CC
Read Current
1
13
30
mA V
CC
e
V
CC
Max, CE
Y
e
V
IL
f
e
8 MHz, I
OUT
e
0 mA
I
CCP
V
CC
Programming Current
1
5
20
mA Programming in Progress
I
CCE
V
CC
Erase Current
1
6
20
mA Erase in Progress
I
CCES
V
CC
Erase Suspend Current
1, 2
5
10
mA Erase Suspended
CE
Y
e
V
IH
m
A V
PP
s
V
CC
m
A V
PP
l
V
CC
m
A RP
Y
e
GND
g
0.2V
mA V
PP
e
V
PPH
Programming in Progress
I
PPS
V
PP
Standby Current
1
g
1
g
10
90
200
I
PPD
V
PP
Deep Power-Down Current
1
0.80
1.0
I
PPP
V
PP
Programming Current
1
6
30
I
PPE
V
PP
Erase Current
1
6
30
mA V
PP
e
V
PPH
Erase in Progress
I
PPES
V
PP
Erase Suspend Current
1
90
300
m
A V
PP
e
V
PPH
Erase Suspended
I
ID
A
9
Intelligent Identifier Current
1
90
500
m
A A
9
e
V
ID
V
IL
Input Low Voltage
b
0.5
0.8
V
V
IH
Input High Voltage
2.0
V
CC
a
0.5
V
V
OL
Output Low Voltage
0.45
V
V
CC
e
V
CC
Min
I
OL
e
5.8 mA
V
CC
e
V
CC
Min
I
OH
e
2.5 mA
V
OH
Output High Voltage
2.4
V
V
ID
A
9
Intelligent Identifier Voltage
11.5
13.0
V
V
PPL
V
PP
during Normal Operations
3
0.0
6.5
V
V
PPH
V
PP
during Prog/Erase Operations
11.4 12.0
12.6
V
V
LKO
V
CC
Erase/Write Lock Voltage
RP
Y
, OE
Y
Unlock Voltage
2.5
V
V
HH
11.4
12.6
V
Boot Block Prog/Erase
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
CC
e
5.0V, V
PP
e
12.0V, T
A
e
25
§
C. These currents
are valid for all product versions (packages and speeds).
2. I
CCES
is specified with the device deselected. If the 28F001BX is read while in Erase Suspend mode, current draw is the
sum of I
CCES
and I
CCR
.
3. Erase/Programs are inhibited when V
PP
e
V
PPL
and not guaranteed in the range between V
PPH
and V
PPL
.
17
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PDF描述 |
|---|---|
| TE28F001BX-T90 | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| TE28F001BX-B150 | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| TE28F001BX-B90 | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| TE28F002BVB80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F002BX-T80 | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F001BX-T90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| TE28F002BVB80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F002BVT80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F002BX-B80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F002BX-B90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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