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參數(shù)資料
| 型號： | TE28F001BX-T150 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 中文描述： | 128K X 8 FLASH 12V PROM, 150 ns, PDSO32 |
| 封裝： | 8 X 20 MM, 1.20 MM HEIGHT, TSOP-32 |
| 文件頁數(shù)： | 14/33頁 |
| 文件大?。?/td> | 436K |
| 代理商： | TE28F001BX-T150 |
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28F001BX-T/28F001BX-B
290406–9
Bus
Command
Comments
Operation
Write
Erase
Suspend
Data
e
B0H
Write
Erase
Data
e
70H
Status Register
Standby/
Read
Read Status Register
Check SR.7
1
e
Ready, 0
e
Busy
Toggle OE
Y
or CE
Y
to
Update Status Register
Standby
Check SR.6
1
e
Suspended
Write
Read Array
Data
e
FFH
Read
Read array data from
block other than that
being erased.
Write
Erase Resume
Data
e
D0H
Figure 11. 28F001BX Erase Suspend/Resume Flowchart
Programming Equipment
For PROM programming equipment that cannot
bring RP
Y
to high voltage, OE
Y
provides an alter-
nate boot block access mechanism. OE
Y
must tran-
sition to V
HH
a minimum of 480 ns before the initial
program/erase setup command and held at V
HH
at
least 480 ns after program or erase confirm com-
mands are issued to the device. After this interval,
OE
Y
can return to normal TTL levels.
DESIGN CONSIDERATIONS
Three-Line Output Control
Flash memories are often used in larger memory ar-
rays. Intel provides three control inputs to accommo-
date multiple memory connections. Three-line con-
trol provides for:
a) lowest possible memory power dissipation
b) complete assurance that data bus contention will
not occur
To efficiently use these control inputs, an address
decoder should enable CE
Y
, while OE
Y
should be
connected to all memory devices and the system’s
READ
Y
control line. This assures that only selected
memory devices have active outputs while deselect-
ed memory devices are in Standby Mode. RP
Y
should be connected to the system POWERGOOD
signal to prevent unintended writes during system
power transitions. POWERGOOD should also toggle
during system reset.
14
相關PDF資料 |
PDF描述 |
|---|---|
| TE28F001BX-T90 | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| TE28F001BX-B150 | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| TE28F001BX-B90 | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| TE28F002BVB80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F002BX-T80 | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F001BX-T90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| TE28F002BVB80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F002BVT80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F002BX-B80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F002BX-B90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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