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參數資料
| 型號： | TDA5360UH |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 光電元器件 |
| 英文描述： | Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads |
| 中文描述： | 12 CHANNEL READ WRITE AMPLIFIER CIRCUIT, UUC75 |
| 封裝： | DIE-75 |
| 文件頁數： | 4/34頁 |
| 文件大?。?/td> | 198K |
| 代理商： | TDA5360UH |
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1998 July 30
Philips Semiconductors
Objective Specification, Revision 2.2
Pre-Amplifier for Hard Disk Drive with
MR-Read / Inductive Write Heads
TDA5360
4
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CC
V
EE
DC Supply voltage
+4.5
-4.5
+5
-5
+5.5
-5.5
V
V
NF
IRNV
Noise Figure
Input Referred Noise
Voltage
Differential gain
Note 3, Section 14
Rmr=66
; Imr=8mA;
10 MHz<f<100 MHz
V
IN
=1mVpp @ 20 MHz,
R
Loaddif
=
330
, Imr=8mA,
Rmr=66
,
GAIN0=0, GAIN1=1;
Rmr=66
, Lmr=30 nH
-3dB: without Boost
1.7
0.8
1.7
dB
nV/
sqrtHz
dB
Avd
50
f
HR
-3dB frequency bandwidth
SAL
GMR
225
225
MHz
MHz
CMR
Common Mode Rejection
Imr=8 mA, Rmr=66
,
10MHz<f<200MHz
1 MHz<f< 10 MHz
f<100 kHz, 1mV input signal
200mVpp on Vcc or Vee,
Imr=8mA, Rmr=66
,
10MHz<f<200MHz
1 MHz<f<10 MHz
f < 100 kHz
Iwr=50 mA; f=20 MHz;
L
H
=75nH, R
H
=10
SAL
GMR (see note section 10)
Rext
=
10 k
20
40
60
dB
dB
dB
PSR
Power Supply Rejection
20
40
60
dB
dB
dB
t
r
, t
f
Write Current Rise/Fall times
(-0.8 * Iwr => +0.8 * Iwr)
Programming MR bias
current range
Programming Write current
range (base-to-peak)
Serial interface clock rate
0.84
10.2
6 .1
50.3
ns
mA
mA
mA
I
MR(PR)
4
3
10
I
WR(b-p)
f
sclk
40
MHz
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