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參數(shù)資料
| 型號(hào)： | TDA5360UH |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 光電元器件 |
| 英文描述： | Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads |
| 中文描述： | 12 CHANNEL READ WRITE AMPLIFIER CIRCUIT, UUC75 |
| 封裝： | DIE-75 |
| 文件頁(yè)數(shù)： | 32/34頁(yè) |
| 文件大小： | 198K |
| 代理商： | TDA5360UH |
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1998 July 30
Philips Semiconductors
Objective Specification, Revision 2.2
Pre-Amplifier for Hard Disk Drive with
MR-Read / Inductive Write Heads
TDA5360
32
13 LIMITING VALUES / RECOMMENDED OPERATION CONDITIONS
In accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP
MAX.
UNIT
V
CC
Positive Supply voltage
range
Negative Supply voltage
range
High level CMOS input
voltage
Low level CMOS input
voltage
Differential Peak to Peak
input voltage
note1
4.5
5.0
5.5
V
V
EE
note 2
-4.5
- 5.0
-5.5
V
V
IH
2.4
V
CC
V
V
IL
0
0.8
V
V
i(dif)(p-p)
(Writer input)
High level PECL input
voltage
Low level PECL input
voltage
Differential Peak to Peak
input current
0.4
2.4
0.7
3.2
2.8
1.5
V
CC
V
V
V
Imode
(Writer input)
High level input current
Low level input current
Ambient temperature
Junction temperature
0.4
-1.4
0.8
-1.2
-0.4
55
70
1.0
-0.1
70
110
mA
mA
mA
°
C
°
C
T
amb
T
j
0
when reading
when writing
130
86
R
MR
L
l(tot)
MR element resistance
Total lead inductance to
the head
46
-
66
17
Ohm
nH
in each lead
R
l(tot)
Total lead resistance to the
head
in each lead
-
1.5
Ohm
V
MR
Voltage accross MR
element (RPx-RNx)
MR head input signal peak
to peak voltage
Write Head inductance
1
V
V
sig(dif)(p-p)
differential
0.4
1
3
mVpp
L
wh
including lead
75
nH
R
wh
Write Head resistance
including lead
-
10
Ohm
C
wh
Write head capacitance
including lead
-
TBD
pF
R
ext
Reference resistor
Iref=Vref/Rext
9.9
10
10.1
k
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