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參數(shù)資料
| 型號： | TDA5360UH |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 光電元器件 |
| 英文描述： | Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads |
| 中文描述： | 12 CHANNEL READ WRITE AMPLIFIER CIRCUIT, UUC75 |
| 封裝： | DIE-75 |
| 文件頁數(shù)： | 27/34頁 |
| 文件大小： | 198K |
| 代理商： | TDA5360UH |
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1998 July 30
Philips Semiconductors
Objective Specification, Revision 2.2
Pre-Amplifier for Hard Disk Drive with
MR-Read / Inductive Write Heads
TDA5360
27
12.2
Unless otherwise specified, recommended operating conditions apply.
Read Characteristics
Voltage compliance for WDP
and WDN in current mode
CMM of the inputs
in current mode
1.5
Vcc -1.7
V
VCCTL
VCC Fault Threshold
Hysteresis=100mV +/- 10%
3.80
4.00
4.20
V
VEETL
VEE Fault Threshold
Hysteresis=100mV +/- 10%
-4.20
-4.00
-3.80
V
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
IMR
MR Current Range
SAL
GMR
4
3
8
10.2
6
mA
Pwr
MR Power Range
SAL
GMR
(Note 3)
1.500
0.375
4.2
1
9.25
2.30
mW
mW
MR Power Tolerance
3 < IMR < 10mA
-5
+5
%
MR Bias Current Overshoot
0
%
RMR Digitizer Accuracy
5
%
VRext
Rext Reference Voltage
1.31
V
AVd
Differential Voltage Gain
VIN = 1mVPP @ 20MHz,
RLoaddif =
330
Ohm,IMR=8mA,
RMR = 66
Ohm,
RIN = 18 Ohm,
GAIN0=0, GAIN1=1,GMR=0
48
50
52
dB
fHR
Passband Upper -3dB
Frequency
RMR = 66
;LMR=30nH
- 3dB. Without boost.
225
MHz
fLR
Passband Lower -3dB
Frequency
RMR = 66
; LMR = 30nH;
LPF0=0
LPF1=1
3
MHz
IRNV
Input referenced noise voltage
(including MR bias current noise,
excluding Rmr noise)
RMR = 66
; IMR=8mA
10 MHz<f<100 MHz, GMR=0
(Note 4)
0.8
nV/
÷sqrt
Hz
MR bias current noise
IMR=8mA 10 MHz<f<100MHz
IMR=5mA 10 MHz<f<130MHz
8
5.7
pA/
sqrt÷
Hz
NF
Noise figure
(Note 5)
1.7
dB
HF noise +3dB frequency
Preamp noise=head noise
350
MHz
LF noise +3dB frequency
Preamp noise=head noise
3
MHz
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