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參數(shù)資料
| 型號： | TDA5345HT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 運動控制電子 |
| 英文描述： | 5 V spindle & VCM driver combo |
| 中文描述： | DISK DRIVE MOTOR CONTROLLER, 2 A, PQFP64 |
| 封裝： | LOW PROFILE, PLASTIC, TQFP-64 |
| 文件頁數(shù)： | 37/44頁 |
| 文件大?。?/td> | 213K |
| 代理商： | TDA5345HT |
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1999 June 10
37
Philips Semiconductors
Preliminary specification
5 V spindle & VCM driver combo
TDA5345HT
3-4 Spindle Pll Charge Pump (assuming that Resistor @ pin RefCurRes is exactly 33 k
)
3-5 back-EMF comparator
4. VCM circuits
4-1 VCM driver
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
ch/disch00
I
ch/disch01
I
ch/disch10
I
ch/disch11
SYM
Cur
charge/discharge current
charge/discharge current
charge/discharge current
charge/discharge current
chargedischarge currents
symetry
rise/Fall time
PllCur[1, 0] = “00”
PllCur[1, 0] = “01”
PllCur[1, 0] = “10”
PllCur[1, 0] = “11”
0.212
0.425
0.612
0.808
0.93
0.25
0.5
0.72
0.95
0.287
0.575
0.828
1.09
1.07
μ
A
μ
A
μ
A
μ
A
GbD
1
2
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
Unit
V
OSen
V
OSdis
V
CT
comparator offset
comparator offset
center tap bias voltage
start up mode
running mode
biasCt = ‘1’ or PorN = ‘0’
1
-5
8
0
15
5
mV
mV
SpinRect
Bemf/2
V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
DSon
I
OS
total FET resistance
output offset current
(I
VCM
= 400 mA)
DAC12 = “00000000000”
& R
Sense
= 1
high Gain, without offset
high Gain, without offset
low Gain, without offset
low Gain, without offset
1.5
+10
-10
mA
I
Max+400
I
Max-400
I
Max+100
I
Max-100
Lin
maximum positive current
maximum negative current
maximum positive current
maximum negative current
transconductance linearity 3 different sections
384
-416
92.5
-102.5
400
-400
98.5
-98.5
416
-384
102.5
-92.5
+3
mA
mA
mA
mA
%
measured
2 legs of the H-bridge
-3
I
QUIES
V
VcmVdd5Div2
G
PD
DISTO
V
fbmax
quiescent current
reference voltage accuracy Ref = Vdd5/2
power driver gain
crossover distortion
max voltage on Vcm+ or
Vcm-
min voltage on Vcm+/-
3.4
15
+3
5.1
mA
%
V/V
-3
4.8
4.95
GbD
positive fly-back, I<100 mA
0
Vdd5+
0.1
-0.3
Vdd5+
0.2
-0.2
Vdd5+
0.3
-0.1
V
V
fbmin
negative fly-back,
I<100 mA
slow retract mode
full power retract mode
full power retract mode
spinRectBemf >= 2.5 V
GbD
V
V
RetRefSR
V
RetRefFP
V
RetLim
R
RetTot
retract circutry ref voltage
retract circutry ref voltage
retract voltage limitation
total mos resistance in
retract mode
110
220
2.45
125
250
2.8
140
280
3.14
3.5
mV
mV
V
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