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參數(shù)資料
| 型號： | TDA21201-S7 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Integrated Switch(MOSFET Driver and MOSFETs) |
| 中文描述： | 集成開關(guān)（MOSFET驅(qū)動器和MOSFET） |
| 文件頁數(shù)： | 9/15頁 |
| 文件大?。?/td> | 754K |
| 代理商： | TDA21201-S7 |
Preliminary Data Sheet
TDA21201
Page 9
Apr-29, 2002
Over voltage protection of Vcc / Avalanche avoidance
The voltage at the Vcc pins of the TDA21201 rises above the nominal DC
value of the Vcc supply (= + 12 V) during the turn-off of the High Side
MOSFET. The voltage overshoots at the Vcc pins according to:
vcc(t) = Vcc + Lstray * di/dt
vcc (t) = instantaneous value of vcc; Vcc = +12 V DC; Lstray = stray
inductance of the PCB traces + the input capacitor’s ESL + the parasitic
inductance of the TDA21201 package itself; di/dt = slew rate of the High Side
current during its turn-off.
V
cc
= +12 V
TDA21201
This equation reveals that Lstray should be made as small as possible (as
vcc(t) is limited by the breakdown voltage of the device, Vcc is given by the
application, di/dt should be as large as possible to reduce switching losses)
using proper layout techniques and low ESL capacitors, e.g. ceramics,
between the Vcc and GND pins of the Integrated Switch.
To protect the Integrated Switch from unallowable voltage spikes, the slew rate
of the High Side current di/dt is controlled in a way so that the overall voltage
(between Vcc pins to GND pins) does not exceed 20 V (measured between
the Vcc and GND pins at the PCB, this voltage will slightly exceed the 20 V
limit within the package/at the chips). As the MOSFETs have a Breakdown
voltage rating Vds = 30 V, it is made sure that they are never driven into
avalanche.
The slew rate control is implemented using the principal of the active zener
clamp technique: When vcc(t) rises during turn-off then the effective gate-drain
voltage of the High Side MOSFET rises, too. If, for what reason ever, the vcc(t)
overshoot approaches a value that possibly could damage the integrated
L
stray
HS
C
in
L
out
LS
D
z
Driver
t
V
< 20
v
cc
HS is turned off
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