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參數(shù)資料
| 型號： | TDA21201-S7 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Integrated Switch(MOSFET Driver and MOSFETs) |
| 中文描述： | 集成開關(guān)（MOSFET驅(qū)動器和MOSFET） |
| 文件頁數(shù)： | 10/15頁 |
| 文件大?。?/td> | 754K |
| 代理商： | TDA21201-S7 |
Preliminary Data Sheet
TDA21201
Page 10
Apr-29, 2002
driver or the MOSFETs, the zener diode becomes conducting and reduces the
discharge speed of the High Side MOSFET′s gate within nanoseconds. This
will reduce slightly the turn-off slew rate of the High Side MOSFET′s current (=
di/dt). As a result the over voltage will be limited.
Power loss in the Integrated Switch TDA21201 / Heat sink estimation
The power loss in the Integrated Switch depends mainly on the current and
the switching frequency. Other conditions that impact the power loss are
increased junction temperature and the layout (e.g. very tight coupling of the
input capacitor to the V
CC
and GND pins to reduce the PCB trace inductance).
Using the above two diagrams the power loss (= the required power
dissipation Pd for thermally stable operation) can be estimated based on a
required phase current Iphase (= current in the Integrated Switch) an based on
the switching frequency per phase f_sw (= frequency of the Integrated Switch
in each phase).
1
2
3
4
5
6
100
150
200
250
300
350
400
450
f_sw / phase [kHz]
P
Iphase =12 A
Iphase =18 A
1
2
3
4
5
6
10
15
20
25
Iphase [A]
P
f_sw = 100 kHz
f_sw = 150 kHz
f_sw = 200 kHz
f_sw = 250 kHz
f_sw = 300 kHz
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