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參數(shù)資料
| 型號： | TC7MTX01FK |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
| 中文描述： | 東芝的CMOS數(shù)字集成電路硅單片 |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 176K |
| 代理商： | TC7MTX01FK |
TC7MTX01FK
2002-03-18
3
Description of Operation
Operation of E
2
PROM read/write OP codes
The operations listed below in the Operation mode selection table are performed using the five pins V.P, W/R,
STB, CK and DIN.
All operations modes other than Normal Operation Mode are triggered by 8-bit serial data input on DIN and CK
on the rising edge of STB. The operation mode is determined by the combination of the W/R signal and the OP code.
Operation mode selection table
Serial input on DIN (CK)
No.
Operating Mode
STB
W/R
V.P
DI1
DI2
DI3
DI4
DI5
DI6
DI7
DI8
1
E
2
PROM write mode
E
2
PROM read mode
E
2
PROM All-erase mode
E
2
PROM All-write overwrite mode
H
H
18 V
H
A6
A5
A4
A3
A2
A1
A0
2
H
L
H
A6
A5
A4
A3
A2
A1
A0
3
H
H
18 V
L
H
L
L
L
*
*
*
4
H
H
18 V
L
H
L
L
H
*
*
*
5
Temperature data read mode
(before compensation: ADC output)
H
L
L
H
L
H
L
*
*
*
6
Temperature data read mode
(after compensation: register output)
H
L
L
H
L
H
H
*
*
*
7
Normal operation mode
L
L
*
*
*
*
*
*
*
*
: NC or V
CC
,
*
: Don’t care, A6~A0: specify address of E
2
PROM word
1. E
2
PROM Write Mode
(V.P 18 V, W/R “H”, DI1 “H”)
Input of an OP code (DI1 H, A6~A0 = address of word to be written) on DIN (while 18 V is applied to
V.P, W/R H and STB H) writes data D0 D7 to the E
2
PROM at the timing shown below.
Note that if D0 D7 are all High, a Byte Erase (all bits are set to H) is performed.
The write starts on the falling edge of the 16
th
CK pulse and ends when STB goes Low.
During a write, DOUT is High-Impedance.
H
A5
A6
A4 A3 A2 A1 A0 D0 D1 D2 D3 D4 D5 D6 D7
V.P
W/R
STB
DIN
CK
Write
Data Write Mode timing chart
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