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參數(shù)資料
| 型號： | TC7MTX01FK |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
| 中文描述： | 東芝的CMOS數(shù)字集成電路硅單片 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 176K |
| 代理商： | TC7MTX01FK |
TC7MTX01FK
2002-03-18
10
Maximum Ratings
(GND 0.0 V)
Characteristic
Symbol
Rating
Unit
Pin
Supply voltage
E
2
PROM write voltage
V
CC
0.5~4.6
V
V
CC
V
P
0.5~20.0
V
V.P
Reference voltage
V
Ref
0.5~V
CC
0.5
V
Ref.
Input voltage
V
IN
0.5~4.0
V
DIN, CK, STB, W/R, Trig1
Output voltage
V
OUT
0.5~V
CC
0.5
V
DOUT, XOcont
Input current
I
IN
10
mA
DIN, CK, STB, W/R, Trig1
Power dissipation
P
D
180
mW
Storage temperature
T
stg
40~125
°C
Recommended Operating Conditions
(GND 0.0 V)
Characteristic
Symbol
Min
Typ.
Max
Unit
Supply voltage
V
CC
2.7
3.0
3.3
V
E
2
PROM write voltage
V
P
17.0
18.0
19.0
V
Reference voltage
V
Ref
2.7
2.8
2.9
V
Input voltage
V
IN
0
V
CC
V
Input rise/fall time
t
r
, t
f
1.0
s
Power-on rise time
t
v
100
s
Operating temperature
T
opr
22
73
°C
E
2
PROM Characteristics
Characteristic
Symbol
Test Circuit
Min
Typ.
Max
Unit
No. of rewrites
N
wr
Ta 25°C, V
CC
3.0 V,
V
P
18.0 V
10000
Times
Data retention time
t
RET
Ta 22~73°C
10
Years
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