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參數(shù)資料
| 型號： | TC55VBM416AFTN55 |
| 廠商： | Toshiba Corporation |
| 英文描述： | CABLE 30 COND RIBBON WHT 100FT |
| 中文描述： | 1,048,576字由16位/ 2097152字的8位全的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 4/14頁 |
| 文件大小： | 204K |
| 代理商： | TC55VBM416AFTN55 |
TC55VBM416AFTN55
2002-08-29 4/14
DC CHARACTERISTICS
(Ta
=
40° to 85°C, V
DD
=
2.3 to 3.6 V)
SYMBOL
PARAMETER
TEST CONDITION
MIN
TYP
MAX UNIT
I
IL
Input Leakage
Current
Output High Current V
OH
=
V
DD
0.5 V
Output Low Current
V
IN
=
0 V~V
DD
±
1.0
μ
A
I
OH
I
OL
0.5
mA
V
OL
=
0.4 V
1
CE
=
V
IH
or CE2
=
V
IL
or LB
=
UB
=
V
IH
or
R/W
=
V
IL
or
OE
=
V
IH
, V
OUT
=
0 V~V
DD
1
CE
=
V
IL
and CE2
=
V
IH
and
R/W
=
V
IH
, LB
=
UB
=
V
IL
,
I
OUT
=
0 mA,
Other Input
=
V
IH
/V
IL
1
CE
=
0.2 V and CE2
=
V
DD
0.2 V and
R/W
=
V
DD
0.2 V, LB
=
UB
=
0.2 V,
I
OUT
=
0 mA,
Other Input
=
V
DD
0.2 V/0.2 V
2.1
mA
I
LO
Output Leakage
Current
±
1.0
μ
A
MIN
35
l
DDO1
t
cycle
1
μ
s
8
mA
MIN
30
l
DDO2
Operating Current
t
cycle
1
μ
s
3
mA
I
DDS1
1)
2) LB
=
UB
=
V
IH
(at BYTE
≥
V
DD
0.2 V)
1
CE
=
V
IH
or CE2
=
V
IL
(at BYTE
≥
V
DD
0.2 V or
≤
0.2 V)
1
mA
V
DD
=
3.3 V
±
0.3 V Ta
=
40~85°C
15
Ta
=
25°C
0.9
Ta
=
40~40°C
3
I
DDS2
Standby Current
1)
1
CE
=
V
DD
0.2 V, CE2
=
V
DD
0.2 V (at BYTE
≥
V
DD
0.2 V or
≤
0.2 V)
2)
CE2
=
0.2 V (at BYTE
≥
V
DD
0.2 V or
≤
0.2 V)
3) LB
=
UB
=
V
DD
0.2 V,
1
CE
=
0.2 V, CE2
=
V
DD
0.2
V (at BYTE
≥
V
DD
0.2 V)
V
DD
=
3.0 V
Ta
=
40~85°C
8
μ
A
CAPACITANCE
(Ta
=
25°C, f
=
1 MHz)
SYMBOL
PARAMETER
TEST CONDITION
MAX
UNIT
C
IN
Input Capacitance
V
IN
=
GND
10
pF
C
OUT
Output Capacitance
V
OUT
=
GND
10
pF
Note: This parameter is periodically sampled and is not 100% tested.
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