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參數資料
| 型號： | TC55VBM416AFTN55 |
| 廠商： | Toshiba Corporation |
| 英文描述： | CABLE 30 COND RIBBON WHT 100FT |
| 中文描述： | 1,048,576字由16位/ 2097152字的8位全的CMOS靜態(tài)RAM |
| 文件頁數： | 12/14頁 |
| 文件大小： | 204K |
| 代理商： | TC55VBM416AFTN55 |
TC55VBM416AFTN55
2002-08-29 12/14
Note:
(1)
In CE1 controlled data retention mode, minimum standby current mode is entered when CE2
≤
0.2 V or
CE2
≥
V
DD
0.2 V.
(2)
When CE1 is operating at the V
IH
(min.) level, the operating current is given by I
DDS1
during the
transition of V
DD
from 2.3(2.7) to 2.2V(2.4 V).
(3)
In CE2 controlled data retention mode, minimum standby current mode is entered when CE2
≤
0.2 V.
(4)
In UB (or LB) controlled data retention mode, minimum standby current mode is entered when CE1
≤
0.2 V or CE1
≥
V
DD
0.2 V, CE2
≤
0.2 V or CE2
≥
V
DD
0.2 V.
(5)
When UB (or LB) is operating at the V
IH
(min.) level, the operating current is given by I
DDS1
during
the transition of V
DD
from 2.3(2.7) to 2.2V(2.4 V).
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