參數(shù)資料
型號: TC55NEM216AFTN70
廠商: Toshiba Corporation
英文描述: CONNECTOR ACCESSORY
中文描述: 連接器附件
文件頁數(shù): 8/11頁
文件大?。?/td> 181K
代理商: TC55NEM216AFTN70
TC55NEM216AFTN55,70
2002-07-04 8/11
Note:
(1)
R/W remains HIGH for the read cycle.
(2)
If CE(or UB or LB) goes LOW coincident with or after R/W goes LOW, the outputs will remain at
high impedance.
(3)
If CE(or UB or LB) goes HIGH coincident with or before R/W goes HIGH, the outputs will remain at
high impedance.
(4)
If OE is HIGH during the write cycle, the outputs will remain at high impedance.
(5)
Because I/O signals may be in the output state at this time, input signals of reverse polarity must not be
applied.
DATA RETENTION CHARACTERISTICS (
Ta
=
40
°
to 85
°
C
)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
V
DH
Data Retention Supply Voltage
2.0
5.5
V
Ta
=
40~40
°
C
3
I
DDS2
Standby Current
Ta
=
40~85
°
C
20
μ
A
t
CDR
Chip Deselect to Data Retention Mode Time
0
ns
t
R
Recovery Time
5
ms
CE
(See Note 2)
, CONTROLLED DATA RETENTION MODE
V
DD
4.5 V
GND
V
IH
DATA RETENTION MODE
t
R
(See Note 3)
(See Note 3)
t
CDR
V
DD
V
DD
0.2 V
UB
, LB
V
DD
4.5 V
GND
V
IH
DATA RETENTION MODE
t
R
(See Note 1)
(See Note 1)
t
CDR
V
DD
V
DD
0.2 V
CE
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