參數(shù)資料
型號: TC55NEM216AFTN70
廠商: Toshiba Corporation
英文描述: CONNECTOR ACCESSORY
中文描述: 連接器附件
文件頁數(shù): 5/11頁
文件大?。?/td> 181K
代理商: TC55NEM216AFTN70
TC55NEM216AFTN55,70
2002-07-04 5/11
AC CHARACTERISTICS AND OPERATING CONDITIONS
(Ta
=
40° to 85°C, V
DD
=
5 V
±
10%)
READ CYCLE
TC55NEM216AFTN
55
70
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
UNIT
t
RC
Read Cycle Time
55
70
t
ACC
Address Access Time
55
70
t
CO
Chip Enable Access Time
55
70
t
OE
Output Enable Access Time
30
35
t
BA
Data Byte Control Access Time
55
70
t
COE
Chip Enable Low to Output Active
5
5
t
OEE
Output Enable Low to Output Active
0
0
t
BE
Data Byte Control Low to Output Active
5
5
t
OD
Chip Enable High to Output High-Z
25
30
t
ODO
Output Enable High to Output High-Z
25
30
t
BD
Data Byte Control High to Output High-Z
25
30
t
OH
Output Data Hold Time
10
10
ns
WRITE CYCLE
TC55NEM216AFTN
55
70
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
UNIT
t
WC
Write Cycle Time
55
70
t
WP
Write Pulse Width
40
50
t
CW
Chip Enable to End of Write
45
55
t
BW
Data Byte Control to End of Write
45
55
t
AS
Address Setup Time
0
0
t
WR
Write Recovery Time
0
0
t
ODW
R/W Low to Output High-Z
25
30
t
OEW
R/W High to Output Active
0
0
t
DS
Data Setup Time
25
30
t
DH
Data Hold Time
0
0
ns
Note: t
OD
, t
ODO
, t
BD
and t
ODW
are specified in time when an output becomes high impedance, and are not judged depending on
an output voltage level.
AC TEST CONDITIONS
PARAMETER
TEST CONDITION
Input pulse level
0.4 V, 2.4 V
t
R
, t
F
5 ns
Timing measurements
1.5 V
Reference level
1.5 V
Output load
100 pF
+
1 TTL Gate
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