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參數(shù)資料
| 型號： | TC33025VOETR |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | 2 A SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PDSO16 |
| 封裝： | SOIC-16 |
| 文件頁數(shù)： | 3/18頁 |
| 文件大小： | 416K |
| 代理商： | TC33025VOETR |
11
TC33025
High Speed Double Ended Controller
TC33025-1 5/25/00
Test
Line Regulation
Load Regulation
Output Ripple
Efficiency
Condition
VIN = 40V to 56V, IOUT = 15A
VIN = 48V, IOUT = 8.0V to 15A
VIN = 48V, IOUT = 15A
Result
14mV = –0.275%
54mV = –1.0%
50mVp—p
71.2%
Primary: 16 turns center tapped #48AV
Secondary: 4 turns center tapped 0.003" (2 layers) copper foil
Bootstrap: 1 turn added to each secondary output #36AWG
Core: Philips 3F3, part #4312 020 4124
Bobbin: Philips part #4322 021 3525
Coilcraft P3269—A
2 turns #48 AWG (1300 strands litz wire)
Core: Philips 3F3, part #EP10—3F3
Bobbin: Philips part #EP10PCB1—8
L = 1.8mH
Coilcraft P3270—A
Power FET: AAVID Heatsink #533902B02554 with clip
All power devices are insulated with Berquist Sil—Pad 1500
5 (1.5‰) resistors in parallel
T1
L1
1
2
Heatsinks —
Output Rectifiers: AAVID Heatsink #533402B02552 with clip
Insulators —
—
7 turns #18AWG, 1/2" diameter air core
Coilcraft P3271—A
L2 —
2 (1.0mF) cearmic capacitors in parallel
3 —
10 (1.0mF) ceramic capacitors in parallel
VIN
100
47k
47
4.7
1N5819
1500pF
22
5.0V
T1
22 1500pF
1N5819
L2
15
13
14
11
12
9
16
4
5
6
7
3
2
1
8
2.0k
1000pF
1.2k
1.0
0.01
22k
0.015
F
47k
0.01
Error
Amp
1.25V
4.0V
9.0mA
10
Shutdown
1.4V
Current
Limit
9.2V
100
47
1N5819
4.7
1N5819
10
100
220pF
R
S
Q
0.5V
1.0V
PWM Latch
MBR2535CTL
1.8
H
0.3W
L1
2.0
F
10
F
IRF640
50
1600pF
900nH
36V to 56V
VOUT
3
2
1
Q
T
R
S
Q
Oscillator
Reference
Regulator
+
–
+
–
+
–
+
–
+
–
Figure 18. MOSFET Parasitic Oscillations
VC
VIN
RS
To
Current
Sense
Input
12
11
14
15
A series gate resistor may be needed to damp high frequency parasitic
oscillation caused by a MOSFET’s input capacitance and any series wiring
inductance in the gate—source circuit. The series resistor will also decrease the
MOSFET’s switching speed. A Schottky diode can reduce the driver’s power
dissipation due to excessive ringing, by preventing the output pin from being
driven below ground. The Schottky diode also prevents substrate injection
when the output pin is driven below ground.
Q
T
Figure 18. MOSFET Parasitic Oscillations
Figure 19. Application Circuit
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