參數(shù)資料
型號(hào): T431616E-7CG
廠商: TM Technology, Inc.
英文描述: 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
中文描述: 100萬(wàn)× 16內(nèi)存為512k × 16Bit的X 2Banks同步DRAM
文件頁(yè)數(shù): 41/74頁(yè)
文件大?。?/td> 781K
代理商: T431616E-7CG
TE
CH
tm
T431616D/E
TM Technology Inc. reserves the right
P. 41
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
Figure 11.3. Random Row Read (Interleaving Banks)
(Burst Length=8, CAS# Latency=3)
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
A10
A0~A9
DQM
DQ
A11
t
CK3
Activate
Command
Bank B
Activate
Command
Bank A
Precharge
Command
Bank B
Bx0
Bx1
Bx2
Bx3
Bx4
Bx5
Bx6 Bx7
Ax0
Ax1
RBx
RBx
RBy
Read
Command
Bank B
Hi-Z
CBy
Read
Command
Bank B
High
RAx
Read
Command
Bank A
Activate
Command
Bank B
Ax7
By0
Ax2
Ax3
Ax4
Ax5 Ax6
CBx
CAx
RAx
RBy
t
RCD
t
AC3
t
RP
Precharge
Command
Bank A
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