參數(shù)資料
型號: T431616C
廠商: TM Technology, Inc.
英文描述: 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
中文描述: 100萬× 16內存為512k × 16Bit的X 2Banks同步DRAM
文件頁數(shù): 9/30頁
文件大?。?/td> 720K
代理商: T431616C
TE
CH
tm
AC CHARACTERISTICS
(AC opterating conditions unless otherwise noted)
T431616C
TM Technology Inc. reserves the right
P.9
to change products or specifications without notice.
Publication Date: AUG. 2004
Revision: A
-6
-7
Parameter
Symbol
Min
6
Max
Min
7
Max
Unit Note
CAS Latency = 3
CLK cycle time
CAS Latency = 2
t
CC
8
1K
8.6
1K
ns
1
CAS Latency = 3
-
5.5
-
6
ns
CLK to valid
Output delay
CAS Latency = 2
t
SAC
-
6
-
6
ns
1
Output data hold time
t
OH
t
CH
t
CL
t
SS
t
SH
t
SLZ
1
1
ns
2
CLK high pulse width
2
2.5
ns
3
CLK low pulse width
2
2.5
ns
3
Input setup time
2
2
ns
3
Input hold time
1
1
ns
3
CLK to output in Low-Z
1
1
ns
2
CAS Latency = 3
-
5.5
-
6
ns
CLK to output in Hi-Z
CAS Latency = 2
t
SHZ
-
6
-
6
ns
Note:
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf)=1ns.
If tr & tf is longer than 1ns,transient time compensation should be considered,
i.e.,[(tr+tf)/2-1]ns should be added to the parameter.
相關PDF資料
PDF描述
T431616C-6S 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616C-6SG 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616C-7S 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616C-7SG 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
相關代理商/技術參數(shù)
參數(shù)描述
T431616C-6S 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616C-6SG 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616C-7S 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616C-7SG 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM