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參數(shù)資料
| 型號(hào)： | T431616C |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| 中文描述： | 100萬× 16內(nèi)存為512k × 16Bit的X 2Banks同步DRAM |
| 文件頁數(shù)： | 12/30頁 |
| 文件大小： | 720K |
| 代理商： | T431616C |
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TE
CH
tm
Burst Length and Sequence
(Burst of Two)
Starting Address
(column address A0 binary)
0
1
(Burst of Four)
Starting Address
(column address A1-A0 binary)
00
01
10
11
(Burst of Eight)
Starting Address
(column address A2-A0 binary)
000
001
010
011
100
101
110
111
T431616C
TM Technology Inc. reserves the right
P.12
to change products or specifications without notice.
Publication Date: AUG. 2004
Revision: A
Sequential Addressing
Sequence (decimal)
0,1
1,0
Interleave Addressing
Sequence (Decimal)
0,1
1,0
Sequential Addressing
Sequence (decimal)
0,1,2,3
1,2,3,0
2,3,0,1
3,0,1,2
Interleave Addressing
Sequence (Decimal)
0,1,2,3
1,0,3,2
2,3,0,1
3,2,1,0
Sequential Addressing
Sequence (decimal)
0,1,2,3,4,5,6,7
1,2,3,4,5,6,7,0
2,3,4,5,6,7,0,1
3,4,5,6,7,0,1,2
4,5,6,7,0,1,2,3
5,6,7,0,1,2,3,4
6,7,0,1,2,3,4,5
7,0,1,2,3,4,5,6
Interleave Addressing
Sequence (Decimal)
0,1,2,3,4,5,6,7
1,0,3,2,5,4,7,6
2,3,0,1,6,7,4,5
3,2,1,0,7,6,5,4
4,5,6,7,0,1,2,3
5,4,7,6,1,0,3,2
6,7,4,5,2,3,0,1
7,6,5,4,3,2,1,0
Full page burst is an extension of the above tables of Sequential Addressing, with the length being 256 for
1Mx16 divice.
POWER UP SEQUENCE
1. Apply power and start clock, attempt to maintain CKE = ‘H’ , L(U)DQM = ‘H’ and the other pin are NOP
condition at the inputs.
2. Maintain stable power, stable clock and NOP input condition for a minimum of 200us.
3. Issue precharge commands for all banks of the devices.
4. Issue 2 or more auto-refresh commands.
5. Issue mode register set command to initalize the mode register.
Cf.) Sequence of 4 & 5 is regardless of the order.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| T431616C-6S | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-6SG | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-7S | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-7SG | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616D | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| T431616C-6S | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-6SG | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-7S | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616C-7SG | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| T431616D | 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
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