參數(shù)資料
型號： T431616A-7C
廠商： TM Technology, Inc.
英文描述： 1M x 16 SDRAM
中文描述： 100萬× 16內(nèi)存
文件頁數(shù)： 6/31頁
文件大?。?/td> 1614K
代理商： T431616A-7C
TE
CH
tm
DC CHARACTERISTICS
T
A
= -5 to 70
°
C
/ -40 to +85
°
C
, V
IH
(min)/V
IL
(max)=2.0V/0.8V
T431616A
Taiwan Memory Technology, Inc. reserves the right
P. 6
to change products or specifications without notice.
Publication Date: DEC. 2000
Revision: C
Speed version
Parameter
Symbol
-6
-7
-8
-10
Unit
Test Condition
Note
Operating Current
( One Bank Active) I
CC1
160
150
140
120 mA
Burst Length = 1
t
RC
≥
t
RC
(min) ,
t
CC
≥
t
CC
(min),I
OL
= 0 mA
CKE
≤
V
IL
(max),
t
CC
=15ns
1,3
I
CC2
P
2
Precharge Standby
Current in power-
down mode
I
CC2
PS
2
mA
CKE
≤
V
IL
(max),CLK
≤
V
IL
(max),
t
CC
=
3
I
CC2
N
30
CKE
≥
V
IH
(min),
CS
≥
V
IH
(min),
t
CC
=15ns
Input signals are changed one time during 30ns
CKE
≥
V
IH
(min),CLK
≤
V
IL
(min),
t
CC
=
Precharge Standby
Current in non
power-down mode
I
CC2
NS
2
mA
Input signals are stable
CKE
≤
VIL(max),
t
CC
=15ns
3
I
CC3
P
10
Active Standby
Current in power-
down mode
I
CC3
PS
10
mA
CKE
≤
V
IL
(max),CLK
≤
V
IL
(max),
t
CC
=
3
I
CC3
N
40
CKE
≥
V
IH
(min),
CS
≥
V
IH
(min),
t
CC
=15ns
Input signals are changed one time during 30ns
CKE
≥
V
IH
(min),CLK
≤
V
IL
(min),
t
CC
=
Active Standby
Current in non
power-down mode
(One Bank Active) I
CC3
NS
10
mA
Input signals are stable
3
180
170
160
140
CAS Latency 3
Operating Current
(Burst Mode)
I
CC4
180
170
160
140
mA
CAS Latency 2
I
OL
=0 mA,Page Burst
All Band Activated
t
CCD
=
t
CCD
(min)
1,3
Refresh Current
I
CC5
180
170
160
140 mA t
RC
≥
t
RC
(min)
2,3
Self refresh
Current
I
CC6
1
mA
CKE
≤
0.2V
Note: 1. Measured with output open. Addresses are changed only one time during
t
CC
(min)
.
2. Refresh period is 32ms. Addresses are changed only one time during
t
CC
(min)
.
3.
t
CC
: Clock cycle time.
t
RC
: Row cycle time.
t
CCD
: Column address to column address delay time.
相關(guān)PDF資料
PDF描述
T431616A-7CI 1M x 16 SDRAM
T431616A-7S 1M x 16 SDRAM
T431616A-7SI 1M x 16 SDRAM
T431616B 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616B-10C 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
T431616A-7CI 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM
T431616A-7S 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM
T431616A-7SI 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM
T431616B 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616B-10C 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
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