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參數(shù)資料
| 型號(hào)： | STW80N06-10 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ溝道增強(qiáng)模式功率ＭＯＳ晶體管) |
| 中文描述： | N溝道增強(qiáng)模式“超高密度”功率MOS晶體管（不適用溝道增強(qiáng)模式功率馬鞍山晶體管） |
| 文件頁(yè)數(shù)： | 5/5頁(yè) |
| 文件大小： | 57K |
| 代理商： | STW80N06-10 |
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STW80NE06-10 | N - CHANNEL 60V - 0.0085ohm - 80A - TO-247 STripFET POWER MOSFET |
| STW80NF55-06 | N-CHANNEL 55V - 0.005ohm - 80A TO-247 STripFET⑩ II POWER MOSFET |
| STW80NF55-08 | N-CHANNEL 55V - 0.0065ohm - 80A TO-247 STripFET⑩ POWER MOSFET |
| STW8N80 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| STW8NB100 | N - CHANNEL 1000V - 1.2ohm- 8A - TO-247 PowerMESH MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STW80NE06-10 | 功能描述:MOSFET RO 511-STW80NF06 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW80NF06 | 功能描述:MOSFET N-CH 60V 80A TO-247 RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:STripFET™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| STW80NF10 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 100V - 0.012ohm - 80A TO-247 LOW GATE CHARGE STripFET⑩ POWER MOSFET |
| STW80NF12 | 制造商:STMicroelectronics 功能描述:TRANS MOSFET N-CH 120V 80A 3PIN TO-247 - Rail/Tube |
| STW80NF55-06 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 55V - 0.005ohm - 80A TO-247 STripFET⑩ II POWER MOSFET |
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