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參數(shù)資料
| 型號： | STU11NC60 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 600V - 0.48ohm - 11A Max220 PowerMeshII MOSFET |
| 中文描述： | N溝道600V的- 0.48ohm - 11A條Max220 PowerMeshII MOSFET的 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 85K |
| 代理商： | STU11NC60 |
STU11NC60
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相關代理商/技術參數(shù) |
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| STU11NM60ND | 功能描述:MOSFET N-Ch, 600V-0.37ohms FDMesh 10A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STU1224N | 制造商:SAMHOP 制造商全稱:SAMHOP 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| STU1255PL | 制造商:SAMHOP 制造商全稱:SAMHOP 功能描述:P-Channel E nhancement Mode Field Effect Transistor |
| STU12N60M2 | 功能描述:MOSFET N-CH 600V 9A IPAK 制造商:stmicroelectronics 系列:MDmesh? M2 包裝:管件 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標準 漏源極電壓（Vdss）:600V 電流 - 連續(xù)漏極（Id）（25°C 時）:9A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:450 毫歐 @ 4.5A，10V 不同 Id 時的 Vgs（th）（最大值）:4V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:16nC @ 10V 不同 Vds 時的輸入電容（Ciss）:538pF @ 100V 功率 - 最大值:85W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-251-3 短引線，IPak，TO-251AA 供應商器件封裝:I-Pak 標準包裝:75 |
| STU12N65M5 | 功能描述:MOSFET POWER MOSFET N-CH 650V 8.5 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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