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參數(shù)資料
| 型號： | STSJ20NM20N |
| 英文描述： | N-CHANNEL 200V 0.11 OHM 20A POWERSO-8 ULTRA LOW GATE CHARGE MDMESH II MOSFET |
| 中文描述： | N溝道200伏0.11歐姆20A條POWERSO - 8超低柵極電荷的MDmesh MOSFET的二 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 223K |
| 代理商： | STSJ20NM20N |
STSJ2NM60
8/8
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
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| STSJ25NF3LL | 功能描述:MOSFET N-Ch 30 Volt 25 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STSJ2NM60 | 制造商:STMicroelectronics 功能描述:TRANS MOSFET N-CH 600V 2A 8PIN PWRSO - Tape and Reel |
| STSJ3NM50 | 制造商:STMicroelectronics 功能描述:TRANS MOSFET N-CH 500V 3A 8PIN PWRSO - Tape and Reel |
| STSJ50NH3LL | 功能描述:MOSFET N-Ch 30 V 0.008 Ohm 50 A STripFET II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STSJ60NH3LL | 功能描述:MOSFET N Ch 30V 0.004 Ohm 15A Pwr RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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