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參數(shù)資料
| 型號(hào)： | STSJ20NM20N |
| 英文描述： | N-CHANNEL 200V 0.11 OHM 20A POWERSO-8 ULTRA LOW GATE CHARGE MDMESH II MOSFET |
| 中文描述： | N溝道200伏0.11歐姆20A條POWERSO - 8超低柵極電荷的MDmesh MOSFET的二 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 223K |
| 代理商： | STSJ20NM20N |
3/8
STSJ2NM60
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(4)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1. When mounted on 1inch
2 FR4 Board, 2oz of Cu, t
≤
10 sec.
2. Pulse width limited by safe operating area
3. I
SD
<3.3A, di/dt<400A/μs, V
DD
<V
(BR)DSS
, T
J
<T
JMAX
4. Pulsed: Pulse duration = 400 μs, duty cycle 1.5 %
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Test Conditions
V
DD
= 300 V, I
D
= 1 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, Figure 3)
V
DD
= 480 V, I
D
= 2 A,
V
GS
= 10 V
Min.
Typ.
Max.
Unit
13
ns
t
r
Rise Time
8
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
6
1.8
3.3
8.4
nC
nC
nC
Parameter
Test Conditions
Min.
Typ.
12
25
30
Max.
Unit
ns
ns
ns
Off-Voltage Rise Time
Fall Time
Cross-Over Time
V
DD
= 480 V, I
D
= 2 A,
R
G
= 4.7
,
V
GS
= 10 V
(see test circuit, Figure 3)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
2
A
Source-drain Current (pulsed)
8
A
Forward On Voltage
I
SD
= 2 A, V
GS
= 0
I
SD
= 2, di/dt = 100A/μs,
V
DD
= 100 V, T
j
= 25°C
(see test circuit, Figure 5)
1.5
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
516
516
2
ns
nC
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 2, di/dt = 100A/μs,
V
DD
= 100 V, T
j
= 150°C
(see test circuit, Figure 5)
808
890
2.2
ns
nC
A
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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