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參數(shù)資料
| 型號： | STS4C3F60L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | StripFET⑩ MOSFET |
| 中文描述： | StripFET⑩MOSFET的 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 434K |
| 代理商： | STS4C3F60L |
STS4C3F60L
2/11
Table 3: Absolute Maximum ratings
Symbol
( )
Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
Table 4: Thermal Data
Rthj-amb (1)
(1) When mounted on 1 inch2 pad of 2 oz. copper, t
≤
10 s
ELECTRICAL CHARACTERISTICS
(T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
Parameter
Test Conditions
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125°C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 16V
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 μA
Table 6: Dynamic
Symbol
g
fs
(1)
(1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5%
Parameter
Value
Unit
N-CHANNEL
P-CHANNEL
V
DS
V
DGR
V
GS
I
D
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
60
V
60
V
Gate-source Voltage
± 16
V
Drain Current (continuous) at T
C
= 25°C
Single Operating
Drain Current (continuous) at T
C
= 100°C
Single Operating
4
3
A
I
D
2.5
1.9
A
I
DM
( )
P
TOT
T
j
T
stg
Drain Current (pulsed)
16
12
A
Total Dissipation at T
C
= 25°C
2
W
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
Thermal Resistance Junction-ambient
62.5
°C/W
Min.
60
60
Typ.
Max.
Unit
V
V
I
D
= 250 μA, V
GS
= 0
n-ch
p-ch
V
DS
= Max Rating
n-ch
p-ch
1
10
μA
μA
V
GS
= ± 16V
n-ch
p-ch
±100
±100
nA
nA
n-ch
p-ch
1
1.5
V
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V, I
D
= 2 A
V
GS
= 10 V, I
D
= 1.5 A
V
GS
= 4.5 V, I
D
= 2 A
V
GS
= 4.5 V, I
D
= 1.5 A
n-ch
p-ch
n-ch
p-ch
0.045
0.100
0.050
0.130
0.055
0.120
0.065
0.160
Parameter
Test Conditions
V
DS
= 30 V
,
I
D
= 2 A
V
DS
= 10 V
,
I
D
= 3 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
7
7.2
Max.
Unit
S
S
Forward
Transconductance
n-ch
p-ch
C
iss
Input Capacitance
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
1030
630
140
121
40
49
pF
pF
pF
pF
pF
pF
C
oss
Output Capacitance
C
rss
Reverse Transfer
Capacitance
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| STS4DNF60L | 功能描述:MOSFET N-Ch 60 Volt 4 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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