參數(shù)資料
型號(hào)： STQ2NK60ZR-AP
廠商： 意法半導(dǎo)體
英文描述： Zener-Protected SuperMESH MOSFET
中文描述： 齊納MOSFET的保護(hù)SuperMESH
文件頁(yè)數(shù)： 3/16頁(yè)
文件大小： 525K
代理商： STQ2NK60ZR-AP
3/16
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
ELECTRICAL CHARACTERISTICS
(T
CASE
=25
°
C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125
°
C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 50 μA
R
DS(on)
Static Drain-source On
Resistance
Table 8: Dynamic
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
C
oss eq.
(3)
t
d(on)
t
r
t
d(off)
t
r
Q
g
Q
gs
Q
gd
Table 9: Source Drain Diode
Symbol
I
SD
I
SDM
(2)
Source-drain Current (pulsed)
V
SD
(1)
Forward On Voltage
t
rr
Q
rr
I
RRM
Reverse Recovery Current
t
rr
Q
rr
I
RRM
Reverse Recovery Current
(1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
Test Conditions
I
D
= 1mA, V
GS
= 0
Min.
600
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
50
μA
μA
V
GS
= ± 20V
±10
μA
3
3.75
4.5
V
V
GS
= 10V, I
D
= 0.7 A
7.2
8
Parameter
Test Conditions
V
DS
= 15 V
,
I
D
= 0.7 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
1
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
170
27
5
pF
pF
pF
Equivalent Output Capacitance V
GS
= 0V, V
DS
= 0V to 480V
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
30
pF
V
DD
= 300 V, I
D
= 0.65 A,
R
G
= 4.7
,
V
GS
= 10 V
(Resistive Load see, Figure
22)
8
30
22
55
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 480V, I
D
= 1.5 A,
V
GS
= 10V
(see, Figure 24)
7.7
1.7
4
10
nC
nC
nC
Parameter
Test Conditions
Min.
Typ.
Max.
1.5
6
Unit
A
A
Source-drain Current
I
SD
= 1.5 A, V
GS
= 0
I
SD
= 1.3 A, di/dt = 100 A/μs
V
DD
= 25V, T
j
= 25
°
C
(see test circuit, Figure 23)
1.6
V
Reverse Recovery Time
Reverse Recovery Charge
250
550
4.4
ns
μC
A
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 1.3 A, di/dt = 100 A/μs
V
DD
= 25V, T
j
= 150
°
C
(see test circuit, Figure 23)
300
690
4.6
ns
μC
A
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