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參數(shù)資料
| 型號(hào)： | STQ2NK60ZR-AP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Zener-Protected SuperMESH MOSFET |
| 中文描述： | 齊納MOSFET的保護(hù)SuperMESH |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 525K |
| 代理商： | STQ2NK60ZR-AP |
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
2/16
Table 3: Absolute Maximum ratings
Symbol
( ) Pulse width limited by safe operating area
(1) I
SD
≤
1.4A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 50 V)
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device
’
s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device
’
s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
TO-92
Unit
TO-220 /
IPAK
TO-220FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
600
V
600
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25
°
C
Drain Current (continuous) at T
C
= 100
°
C
1.4
0.4
1.4 (*)
A
0.77
0.25
0.77 (*)
A
Drain Current (pulsed)
5.6
1.6
5.6 (*)
A
Total Dissipation at T
C
= 25
°
C
Derating Factor
Gate source ESD (HBM-C= 100pF, R=1.5k
)
45
3
20
W
0.36
0.025
0.16
W/
°
C
V
ESD(G-S)
V
ISO
dv/dt (1)
T
j
T
stg
1500
V
Insulation Withstand Voltage (DC)
2500
V
Peak Diode Recovery voltage slope
4.5
V/ns
Operating Junction Temperature
Storage Temperature
-55 to 150
°
C
TO-220/IPAK
2.77
100
--
TO-220FP
6.25
100
--
TO-92
--
120
40
260
Unit
°
C/W
°
C/W
°
C/W
°
C
Rthj-case
Rthj-amb
Rthj-lead
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
Maximum Lead Temperature For Soldering
Purpose
300
Parameter
Max Value
1.4
Unit
A
90
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Gate source
Breakdown Voltage
I
gs
= ± 1 mA
(Open Drain)
30
V
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