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參數(shù)資料
| 型號： | STQ2NK60ZR-AP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Zener-Protected SuperMESH MOSFET |
| 中文描述： | 齊納MOSFET的保護SuperMESH |
| 文件頁數(shù)： | 16/16頁 |
| 文件大?。?/td> | 525K |
| 代理商： | STQ2NK60ZR-AP |
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
16/16
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| STQ-3016 | 制造商:RF Micro Devices Inc 功能描述:IC QUADRATURE MOD DIRECT 16TSSOP |
| STQ-3016Z | 制造商:SIRENZA 制造商全稱:SIRENZA 功能描述:2500 -4000 MHz Direct Quadrature Modulator |
| STQ3N45K3-AP | 功能描述:MOSFET N-Ch 450V 3.2 Ohm 1.8A SuperMESH3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STQ3NK50ZR-AP | 功能描述:MOSFET N-CH 500V 500MA TO-92 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:SuperMESH™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| STQ4N52K3-AP | 制造商:STMicroelectronics 功能描述:MOSFET N-CH 620V |
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