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參數(shù)資料
| 型號： | STQ1NK60ZR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET |
| 中文描述： | N溝道600V的13歐姆0.8A TO-92/IPAK/SOT-223齊納MOSFET的保護(hù)SuperMESH |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 657K |
| 代理商： | STQ1NK60ZR |
3/14
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
ELECTRICAL CHARACTERISTICS
(T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On /Off
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating,
T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 50 μA
R
DS(on)
Static Drain-source On
Resistance
Table 8: Dynamic
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
Table 9: Source Drain Diode
Symbol
I
SD
I
SDM
(2)
Source-drain Current (pulsed)
V
SD
(1)
Forward On Voltage
t
rr
Q
rr
I
RRM
Reverse Recovery Current
t
rr
Q
rr
I
RRM
Reverse Recovery Current
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Test Conditions
I
D
= 1 mA, V
GS
= 0
Min.
600
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
50
μA
μA
V
GS
= ± 20V
±10
μA
3
3.75
4.5
V
V
GS
= 10V, I
D
= 0.4 A
13
15
Parameter
Test Conditions
V
DS
= V
,
I
D
= 0.4 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
0.5
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
94
17.6
2.8
pF
pF
pF
C
oss eq.
(3)
V
GS
= 0V, V
DS
= 0V to 480V
11
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DD
= 300V, I
D
= 0.4 A
R
G
= 4.7
V
GS
= 10 V
(see Figure 21)
5.5
5
13
28
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 480V, I
D
= 0.8 A,
V
GS
= 10V
(see Figure 25)
4.9
1
2.7
6.9
nC
nC
nC
Parameter
Test Conditions
Min.
Typ.
Max.
0.8
2.4
Unit
A
A
Source-drain Current
I
SD
= 0.8A, V
GS
= 0
I
SD
= 0.8 A, di/dt = 100A/μs
V
DD
= 20V, T
j
= 25°C
(see Figure 23)
1.6
V
Reverse Recovery Time
Reverse Recovery Charge
135
216
3.2
ns
nC
A
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 0.8 A, di/dt = 100A/μs
V
DD
= 20V, T
j
= 150°C
(see Figure 23)
140
224
3.2
ns
nC
A
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