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參數(shù)資料
| 型號： | STQ1NK60ZR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET |
| 中文描述： | N溝道600V的13歐姆0.8A TO-92/IPAK/SOT-223齊納MOSFET的保護(hù)SuperMESH |
| 文件頁數(shù)： | 14/14頁 |
| 文件大小： | 657K |
| 代理商： | STQ1NK60ZR |
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
14/14
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STQ1NK60ZR-AP | N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET |
| STD1NB50 | N-Channel 500V-7.5Ω-1.4A- IPAK PowerMESHTM MOSFET(N溝道MOSFET) |
| STD1NB60 | N - CHANNEL 600V - 7.4ohm - 1A - IPAK/DPAK PowerMESH MOSFET |
| STD1NB80-1 | N-Channel 800V-16Ω-1A- IPAK PowerMESH MOSFET(N溝道MOSFET) |
| STD1NC40-1 | N - CHANNEL 400V- 8ohm - 1A - IPAK PowerMESH II MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STQ1NK60ZR-AP | 功能描述:MOSFET N-CH 600V 0.3A TO-92 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:SuperMESH™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| STQ1NK60ZR-AP_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 13Ω - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH? Power MOSFET |
| STQ1NK80ZR-AP | 功能描述:MOSFET N Ch 800V 13 Ohm 1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STQ-2016 | 制造商:RF Micro Devices Inc 功能描述:IC QUADRATURE MOD DIRECT 16TSSOP |
| STQ-2016-3 | 制造商:RF Micro Devices Inc 功能描述:IC QUADRATURE MOD DIRECT 16TSSOP |
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