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參數(shù)資料
| 型號： | STQ1NK60ZR |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET |
| 中文描述： | N溝道600V的13歐姆0.8A TO-92/IPAK/SOT-223齊納MOSFET的保護SuperMESH |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 657K |
| 代理商： | STQ1NK60ZR |
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
2/14
Table 3: Absolute Maximum ratings
Symbol
( ) Pulse width limited by safe operating area
(1) I
SD
≤
0.3A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
Table 4: Thermal Data
(#) When mounted on 1 inch2 Fr-4 board, 2 Oz Cu
Table 5: Avalanche Characteristics
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Table 6: Gate-Source Zener Diode
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
TO-92
Unit
IPAK
SOT-223
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
600
V
600
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
0.8
0.3
0.3
A
0.5
0.189
0.189
A
Drain Current (pulsed)
3.2
1.2
1.2
A
Total Dissipation at T
C
= 25°C
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
25
3
3.3
W
0.24
0.025
0.026
W/°C
V
ESD(G-S)
dv/dt (1)
T
j
T
stg
800
V
4.5
V/ns
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
IPAK
5
100
--
275
TO-92
--
120
40
260
SOT-223
--
37.87(#)
--
260
Rthj-case
Rthj-amb
Rthj-lead
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
°C/W
°C/W
°C/W
°C
Maximum Lead Temperature For Soldering Purpose
Parameter
Max Value
0.8
Unit
A
60
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STQ1NK60ZR-AP | 功能描述:MOSFET N-CH 600V 0.3A TO-92 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:SuperMESH™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| STQ1NK60ZR-AP_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 13Ω - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH? Power MOSFET |
| STQ1NK80ZR-AP | 功能描述:MOSFET N Ch 800V 13 Ohm 1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STQ-2016 | 制造商:RF Micro Devices Inc 功能描述:IC QUADRATURE MOD DIRECT 16TSSOP |
| STQ-2016-3 | 制造商:RF Micro Devices Inc 功能描述:IC QUADRATURE MOD DIRECT 16TSSOP |
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