- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382564 > STP62NS04Z (意法半導(dǎo)體) N-CHANNEL CLAMPED 12.5m - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET PDF資料下載
參數(shù)資料
| 型號： | STP62NS04Z |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL CLAMPED 12.5m - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET |
| 中文描述： | N通道鉗位1250萬- 62A條至220充分保護MOSFET的網(wǎng)格密胺 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 249K |
| 代理商： | STP62NS04Z |
3/8
STP62NS04Z
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 20 V
R
G
= 4.7
(Resistive Load, Figure 3)
I
D
= 20 A
V
GS
= 10 V
13
104
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 20 V I
D
= 40 A V
GS
= 10V
34
10
11.5
47
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 20 V
R
G
= 4.7
(Resistive Load, Figure 3)
I
D
= 20 A
V
GS
= 10 V
41
42
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
clamp
= 30 V
R
G
= 4.7
,
(Inductive Load, Figure 5)
I
D
= 40 A
V
GS
= 10 V
30
54
90
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
62
248
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 62 A
V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 40 A
V
DD
= 20 V
(see test circuit, Figure 5)
di/dt = 100A/μs
T
j
= 150°C
45
65
2.9
ns
nC
A
ELECTRICAL CHARACTERISTICS
(continued)
Safe Operating Area
Thermal Impedance
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STP6LNC60 | N-CHANNEL 600V - 1ohm - 5.8A TO-220/TO-220FP PowerMesh⑩II MOSFET |
| STP6LNC60FP | N-CHANNEL 600V - 1ohm - 5.8A TO-220/TO-220FP PowerMesh⑩II MOSFET |
| STP6N50FI | ; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| STP6N50 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STP6NA60FP | N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強模式快速功率MOS晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP62NS04Z_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel clamped 12.5mOHM - 62A - TO-220 Fully protected MESH OVERLAY Power MOSFET |
| STP6308 | 制造商:STANSON 制造商全稱:STANSON 功能描述:STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. |
| STP6-420 | 制造商:Carlo Gavazzi 功能描述: |
| STP6-430 | 制造商:Carlo Gavazzi 功能描述: |
| STP65NF06 | 功能描述:MOSFET N-channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。