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參數(shù)資料
| 型號： | STP4NC80ZFP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | CAP 3300PF 50V 5% X7R SMD-0603 TR-7 PLATED-NI/SN AUTO |
| 中文描述： | N溝道800V的- 2.4ohm - 4A條TO-220/FP/D2PAK/I2PAK齊保護(hù)的PowerMESH⑩三MOSFET的 |
| 文件頁數(shù)： | 4/14頁 |
| 文件大?。?/td> | 543K |
| 代理商： | STP4NC80ZFP |
STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1
4/14
GATE-SOURCE ZENER DIODE
Symbol
Gate-Source Breakdown
Voltage
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3.
V
BV
=
α
T (25°-T) BV
GSO
(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Igs=± 1mA (Open Drain)
25
V
α
T
Voltage Thermal Coefficient
T=25°C Note(3)
1.3
10
-4
/°C
Rz
Dynamic Resistance
I
D
= 50 mA,
90
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相關(guān)代理商/技術(shù)參數(shù) |
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| STP4NK50Z | 功能描述:MOSFET N-Ch 500 Volt 3 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP4NK50ZD | 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP4NK50ZFP | 功能描述:MOSFET N-Ch, 500V-2.4ohms Zener SuperMESH 3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP4NK60Z | 功能描述:MOSFET N-Ch 600 Volt 4 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP4NK60Z | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
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