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參數(shù)資料
| 型號： | STP4NC80ZFP |
| 廠商： | 意法半導體 |
| 英文描述： | CAP 3300PF 50V 5% X7R SMD-0603 TR-7 PLATED-NI/SN AUTO |
| 中文描述： | N溝道800V的- 2.4ohm - 4A條TO-220/FP/D2PAK/I2PAK齊保護的PowerMESH⑩三MOSFET的 |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 543K |
| 代理商： | STP4NC80ZFP |
STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1
2/14
ABSOLUTE MAXIMUM RATINGS
Symbol
()Pulse width limited by safe operating area
(1)I
SD
≤
4A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
.
(*)Pulse width Limited by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
BV
DSS
/
T
J
Breakdown Voltage Temp.
Coefficient
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
Parameter
Value
Unit
STP(B)4NC80Z(-1)
STP4NC80ZFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
G
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
800
V
800
V
Gate- source Voltage
± 25
V
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
4
4(*)
A
2.5
2.5(*)
A
Drain Current (pulsed)
16
16(*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
100
35
W
0.8
0.28
W/°C
I
GS
Gate-source Current
±50
mA
V
ESD(G-S)
dv/dt(1)
V
ISO
T
stg
T
j
Gate source ESD(HBM-C=100pF, R=15K
)
Peak Diode Recovery voltage slope
2.5
KV
3
V/ns
Insulation Winthstand Voltage (DC)
--
2000
V
Storage Temperature
–65 to 150
°C
Max. Operating Junction Temperature
150
°C
TO-220 / D
2
PAK /
I
2
PAK
1.25
TO-220FP
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.57
°C/W
°C/W
30
Maximum Lead Temperature For Soldering Purpose
300
°C
Parameter
Max Value
4
Unit
A
225
mJ
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
800
Typ.
Max.
Unit
V
I
D
= 1 mA, V
GS
= 0
0.9
V/°C
V
DS
= Max Rating
1
μA
50
μA
V
GS
= ±20V
±10
μA
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STP4NK50Z | 功能描述:MOSFET N-Ch 500 Volt 3 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP4NK50ZD | 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP4NK50ZFP | 功能描述:MOSFET N-Ch, 500V-2.4ohms Zener SuperMESH 3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP4NK60Z | 功能描述:MOSFET N-Ch 600 Volt 4 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP4NK60Z | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
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