參數(shù)資料
型號: STP3NA100
廠商: 意法半導(dǎo)體
英文描述: N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式快速功率MOS晶體管)
中文描述: N溝道增強(qiáng)模式快速功率MOS晶體管(不適用溝道增強(qiáng)模式快速功率馬鞍山晶體管)
文件頁數(shù): 3/9頁
文件大?。?/td> 115K
代理商: STP3NA100
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 500 V
R
G
= 4.7
V
DD
= 800 V
I
D
= 1.7 A
V
GS
= 10 V
I
D
= 3.5 A V
GS
= 10 V
20
27
27
35
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
48
8
23
65
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 800 V
R
G
= 47
(see test circuit, figure 5)
I
D
= 3.5 A
V
GS
= 10 V
62
22
95
85
30
125
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
3.5
14
A
A
V
SD
(
)
I
SD
= 3.5 A
V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 3.5 A
V
DD
= 100 V
(see circuit, figure 5)
di/dt = 100 A/
μ
s
T
j
= 150
o
C
1000
15
35
ns
μ
C
A
(
) Pulsed: Pulse duration =300
μ
s, duty cycle 1.5 %
(
) Pulse widthlimited by safe operating area
Safe OperatingArea for TO-220
Safe OperatingArea for TO-220FP
STP3NA100/FI
3/9
相關(guān)PDF資料
PDF描述
STP3NB100FP N-Channel 1000V-5.3Ω-3A- TO-220/TO-220FP PowerMESH MOSFET(N溝道MOSFET)
STP3NB100 N-Channel 1000V-5.3Ω-3A- TO-220/TO-220FP PowerMESH MOSFET(N溝道MOSFET)
STP3NB80FP N-Channel 800V-4.6Ω-2.6A- TO-220/TO-220FP PowerMESHTM MOSFET(N溝道MOSFET)
STP3NC50 N-CHANNEL 500V - 3ohm - 2.8A TO-220 PowerMesh⑩II MOSFET
STP3NC70ZFP N-CHANNEL 700V - 4.1ohm - 2.5A TO-220/TO-220FP Zener-Protected PowerMESH⑩III MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STP3NA100FI 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STP3NA100FP 制造商:未知廠家 制造商全稱:未知廠家 功能描述:OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STP3NA50 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STP3NA50FI 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STP3NA60 功能描述:MOSFET N-Ch 600 Volt 2.9 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube