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參數(shù)資料
| 型號： | STP16NK65Z |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 650V-0.38OHM-13A TO-220 I2SPAK Zener - Protected SuperMESH MOSFET |
| 中文描述： | N溝道?650V - 0.38OHM - 13A條至220 I2SPAK齊納- MOSFET的保護SuperMESH |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 286K |
| 代理商： | STP16NK65Z |
STP16NK65Z - STB16NK65Z-S
2/12
Table 3: Absolute Maximum ratings
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25
°
C
I
D
Drain Current (continuous) at T
C
= 100
°
C
I
DM
(*)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25
°
C
Derating Factor
V
ESD(G-S)
Gate source EDS (HBM-C=100pF, R=1.5k
)
dv/dt (1)
Peak Diode Recovery voltage slope
T
j
T
stg
Storage Temperature
(*) Pulse width limited by safe operating area
(1) I
SD
≤
13 A, di/dt
≤
200 A
/
μs, V
DD
≤
V
(BR)DSS
,T
j
≤
T
JMAX
Table 4: Thermal Data
Rthj-case
Rthj-amb
T
l
Table 5: Avalanche Characteristics
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 50 V)
Table 6: Gate-Source Zener Diode
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device
’
s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied fromgate to source. In this respect the Zener voltage ia appropriate to achieve an efficient and
cost-effective intervention to protect the device
’
s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
650
V
650
V
± 30
V
13
A
8.19
A
52
A
190
W
1.51
W/
°
C
6000
V
4.5
V/ns
Operating Junction Temperature
-55 to 150
°
C
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
0.66
62.5
°
C/W
°
C/W
Maximum Lead Temperature For Soldering Purpose
300
°
C
Parameter
Max. Value
13
Unit
A
350
mJ
Parameter
Test Condition
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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| STP16NK65Z-S | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 0.38з - 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH⑩ MOSFET |
| STP16NM50N | 功能描述:MOSFET N Ch 600V 7A Pwr MESH IGBT RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP16NS25 | 功能描述:MOSFET N-Ch 250 Volt 16 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP16NS25FP | 功能描述:MOSFET N-Ch 250 Volt 16 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP170N8F7 | 功能描述:MOSFET N-CH 80V 120A TO-220AB 制造商:stmicroelectronics 系列:STripFET? F7 包裝:管件 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標準 漏源極電壓（Vdss）:80V 電流 - 連續(xù)漏極（Id）（25°C 時）:120A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:3.9 毫歐 @ 60A，10V 不同 Id 時的 Vgs（th）（最大值）:4.5V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:120nC @ 10V 不同 Vds 時的輸入電容（Ciss）:8710pF @ 40V 功率 - 最大值:250W 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:通孔 封裝/外殼:TO-220-3 供應商器件封裝:TO-220 標準包裝:50 |
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