參數(shù)資料
型號(hào): STP16NK65Z
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 650V-0.38OHM-13A TO-220 I2SPAK Zener - Protected SuperMESH MOSFET
中文描述: N溝道?650V - 0.38OHM - 13A條至220 I2SPAK齊納- MOSFET的保護(hù)SuperMESH
文件頁數(shù): 12/12頁
文件大?。?/td> 286K
代理商: STP16NK65Z
STP16NK65Z - STB16NK65Z-S
12/12
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
2005 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
相關(guān)PDF資料
PDF描述
STB19NB20 N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET)
STB22NE03L N - CHANNEL 30V - 0.034ohm - 22A TO-263 STripFET] POWER MOSFET
STB3NC60 N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
STB40NE03L-20 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET
STB4NB50 N-Channel 500V-2.5Ω-3.8A-D2PAK/I2PAK PowerMESH MOSFET(N溝道MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STP16NK65Z-S 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 0.38з - 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH⑩ MOSFET
STP16NM50N 功能描述:MOSFET N Ch 600V 7A Pwr MESH IGBT RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP16NS25 功能描述:MOSFET N-Ch 250 Volt 16 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP16NS25FP 功能描述:MOSFET N-Ch 250 Volt 16 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP170N8F7 功能描述:MOSFET N-CH 80V 120A TO-220AB 制造商:stmicroelectronics 系列:STripFET? F7 包裝:管件 零件狀態(tài):有效 FET 類型:MOSFET N 通道,金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓(Vdss):80V 電流 - 連續(xù)漏極(Id)(25°C 時(shí)):120A(Tc) 不同?Id,Vgs 時(shí)的?Rds On(最大值):3.9 毫歐 @ 60A,10V 不同 Id 時(shí)的 Vgs(th)(最大值):4.5V @ 250μA 不同 Vgs 時(shí)的柵極電荷(Qg):120nC @ 10V 不同 Vds 時(shí)的輸入電容(Ciss):8710pF @ 40V 功率 - 最大值:250W 工作溫度:-55°C ~ 175°C(TJ) 安裝類型:通孔 封裝/外殼:TO-220-3 供應(yīng)商器件封裝:TO-220 標(biāo)準(zhǔn)包裝:50