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參數(shù)資料
| 型號： | STM9435 |
| 廠商： | SamHop Microelectronics Corp. |
| 英文描述： | P -Channel E nhancement Mode F ield E ffect Transistor |
| 中文描述： | P通道位置nhancement F型爾德首頁ffect晶體管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 655K |
| 代理商： | STM9435 |
STM9435
ELECTRICAL CHARACTERISTICS (T
A
=
Parameter
Symbol
Condition
Min Typ
Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
=
-30
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
GS
0V
=
-1
uA
Gate-Body Leakage
I
GSS
V
GS
20V, V
DS
=
100
nA
ON CHARACTERISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= -250uA
=
-1
-1.5
-2.5
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
-10V, I
D
-5.3A
=
V
GS
-4.5V, I
D
-4.2A
=
On-State Drain Current
I
D(ON)
g
V
DS
= -5V, V
GS
= -10V
-20
A
S
Forward Transconductance
FS
V
DS
-5V, I
D
- 5.3A
=
DYNAMIC CHARACTERISTICS
c
Input Capacitance
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=-15V, V
GS
= 0V
f =1.0MH
Z
P
F
P
F
P
F
SWITCHING CHARACTERISTICS
c
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
D
= -15V
I
D
= -1A
V
GEN
= - 10V
R
GEN
= 6 ohm
R
L
= 15 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=-15V, I
D
= -5.3A
V
GS
=-10V
nC
nC
nC
C
Fall Time
=
=
=
5
2
m-ohm
m-ohm
55
85
nC
V
DS
=-15V,I
D
=-5.3A,V
GS
=-10V
V
DS
=-15V,I
D
=-5.3A,V
GS
=-4.5V
582
125
86
9
10
37
23
11.7
2.9
5.7
2.1
5
45
75
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