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參數(shù)資料
| 型號(hào)： | STM8405 |
| 廠商： | SamHop Microelectronics Corp. |
| 英文描述： | Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) |
| 中文描述： | 雙位置nhancement模式域E ffect晶體管（N和P溝道） |
| 文件頁數(shù)： | 4/11頁 |
| 文件大小： | 1074K |
| 代理商： | STM8405 |
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
I
D
,
C
I
D
,
4
5
20
16
12
8
4
0
0
1
2
3
4
5
6
V
GS
=10,9,8,7,6,5V
V
GS
=3V
-55 C
25 C
25
20
15
10
5
0
0
0.8
1.6
2.4
3.2
4.0
4.8
Tj=125 C
Tj=( C )
2.2
1.8
1.4
1.0
0.8
0.4
0
-50
0
50
100
150
1200
1000
800
600
400
200
0
0
5
10
15
20
25
30
Ciss
Coss
Crss
Parameter
Symbol
Condition
Min
Typ
Max Unit
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =1.7A
V
GS
= 0V, Is =-1.7A
N-Ch
P-Ch
0.8
-0.78
1.2
-1.2
V
b
C
Notes
a.Surface Mounted on FR4 Board, t 10sec.
c.Guaranteed by design, not subject to production testing.
N-Channel
b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
V
GS
=4V
-25
25
75
125
V
GS
=10V
I
D
=6.6A
STM8405
O
R
D
,
Tj, Junction Temperature ( C)
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