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參數(shù)資料
| 型號： | STM8405 |
| 廠商： | SamHop Microelectronics Corp. |
| 英文描述： | Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) |
| 中文描述： | 雙位置nhancement模式域E ffect晶體管（N和P溝道） |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 1074K |
| 代理商： | STM8405 |
STM8405
=
Parameter
Symbol
Condition
Min Typ
Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
=
-30
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
GS
0V
=
-1
Gate-Body Leakage
I
GSS
V
GS
22V, V
DS
0V
=
100
nA
ON CHARACTERISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= -250uA
=
-1
-2.5
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS -
10V, I
D -
5A
=
V
GS -
4.5V, I
D -
4A
=
60
On-State Drain Current
I
D(ON)
g
V
DS
= -5V, V
GS
= -10V
A
S
Forward Transconductance
FS
V
DS
-5V, I
D -
5A
=
DYNAMIC CHARACTERISTICS
c
Input Capacitance
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=-15V, V
GS
= 0V
f =1.0MH
Z
P
F
P
F
P
F
SWITCHING CHARACTERISTICS
Turn-On Delay Time
c
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= -15V
R
L
= 2.7 ohm
V
GS
= -10V
R
GEN
= 3 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=-15V, I
D
= -5 A
V
GS
=-10V
nC
nC
nC
nC
C
Fall Time
3
5
45
-1.5
uA
m ohm
m ohm
P-Channel ELECTRICAL CHARACTERISTICS (T
A
25 C unless otherwise noted)
V
DS
=-15V, I
D
=-5A,V
GS
=-10V
V
DS
=-15V, I
D
=-5A,V
GS
=-4.5V
35
20
92
154
721
13.8
22.6
47.2
7.8
4.7
4.3
1.5
7.3
50
9
ohm
Rg
Gate resistance
V
GS
=0V, V
DS
= 0V, f=1.0MH
Z
820
180
108
3.3
5.5
9
56
26
16
8.6
2
5
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| STM841 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 8A I(D) | TO-220AB |
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