參數(shù)資料
型號: STM4437
廠商: SamHop Microelectronics Corp.
英文描述: P -Channel Enhancement Mode MOS FET
中文描述: P溝道增強型MOS場效應管
文件頁數(shù): 4/7頁
文件大?。?/td> 644K
代理商: STM4437
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
V
G
g
F
,
-
G
,
B
D
,
D
-
Figure 7. Transconductance Variation
with Drain Current
-I
DS
, Drain-Source Current (A)
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
Figure 10. Maximum Safe
Operating Area
-V
DS
, Drain-Source Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
-V
SD
, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
-
D
,
4
25
20
0
5
10
15
0
5
10
15
20
V
DS
=-5V
20.0
10.0
1.0
0.4
0.6
0.7
0.9
1.1
1.3
V
GS
=0V
8
10
6
4
2
0
0
8
24
32
48
56
64
V
DS
=-15V
I
D
=-10A
60
10
1
0.1
0.03
0.1
1
10
30 50
V
GS
=-20V
Single Pulse
T
A
=25 C
R
S
(ON im
10ms
100ms
1s
DC
STM4437
16
40
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100 125
V
DS
=V
GS
I
D
=-250uA
-50
-25
0
25
50
75
100 125
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=-250uA
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