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參數(shù)資料
| 型號： | STM4437 |
| 廠商： | SamHop Microelectronics Corp. |
| 英文描述： | P -Channel Enhancement Mode MOS FET |
| 中文描述： | P溝道增強型MOS場效應(yīng)管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 644K |
| 代理商： | STM4437 |
STM4437
ELECTRICAL CHARACTERISTICS (T
A
=
Parameter
Symbol
Condition
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
=
-30
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
GS
0V
=
-1
uA
Gate-Body Leakage
I
GSS
V
GS
25V, V
DS
=
100
nA
ON CHARACTERISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= -250uA
=
-1
-2.5
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
-20V, I
D
-10A
=
V
GS
-10V, I
D
-10A
=
On-State Drain Current
I
D(ON)
V
DS
= -5V, V
GS
= -10V
A
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
FS
g
V
DS
-5V, I
D
c
Input Capacitance
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
V
DS
= -15V, V
GS
= 0V
f =1.0MH
Z
P
F
P
F
P
F
c
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= -15V
R
L
=1.25ohm
V
GS
= -10V
R
GEN
=6ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
= -15V, I
D
= -10A,
V
GS
= -10V
nC
nC
nC
C
=
=
2
m-ohm
m-ohm
30
=-10A
2963
641
276
4.9
8.8
27.1
15.5
60.5
8.3
13.7
13
14
V
GS
-4.5V, I
D
-10A
=
=
m-ohm
24
20
9
10
15
-1.8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STM4437A | 制造商:SAMHOP 制造商全稱:SAMHOP 功能描述:P-Channel E nhancement Mode Field Effect Transistor |
| STM4439 | 制造商:SAMHOP 制造商全稱:SAMHOP 功能描述:P -Channel E nhancement Mode MOSFET |
| STM4439A | 制造商:SAMHOP 制造商全稱:SAMHOP 功能描述:P-Channel E nhancement Mode Field Effect Transistor |
| STM4460 | 制造商:SAMHOP 制造商全稱:SAMHOP 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| STM4470E | 制造商:SAMHOP 制造商全稱:SAMHOP 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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