參數(shù)資料
型號(hào): STL20NM20N
廠(chǎng)商: 意法半導(dǎo)體
英文描述: N-CHANNEL 200V - 0.088ohm - 20A PowerFLAT ULTRA LOW GATE CHARGE MDmesh II MOSFET
中文描述: N溝道200伏- 0.088ohm - 20A條的PowerFLAT超低柵極電荷的MDmesh MOSFET的二
文件頁(yè)數(shù): 9/9頁(yè)
文件大?。?/td> 288K
代理商: STL20NM20N
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STL20NM20N
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參數(shù)描述
STL20NM20N_06 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 200V - 0.088Ω - 20A PowerFLAT? ULTRA LOW GATE CHARGE MDmesh? II MOSFET
STL2-1130GGT-016U 制造商:Microparts-Garry 功能描述:MPESTL2-1130GGT-016U CONN STL2-1130-GGT-
STL21-A02VGT-028C/TR 制造商:GARRY 功能描述:
STL21N65M5 功能描述:MOSFET Mdmesh 650V .19 Ohms 1mm TO-220 17A (ID) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STL220N3LLH7 功能描述:MOSFET N-CH 30V 220A POWERFLAT56 制造商:stmicroelectronics 系列:DeepGATE?,STripFET? VII 包裝:剪切帶(CT) 零件狀態(tài):有效 FET 類(lèi)型:MOSFET N 通道,金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓(Vdss):30V 電流 - 連續(xù)漏極(Id)(25°C 時(shí)):220A(Tc) 不同?Id,Vgs 時(shí)的?Rds On(最大值):1.1 毫歐 @ 25A,10V 不同 Id 時(shí)的 Vgs(th)(最大值):2.2V @ 250μA 不同 Vgs 時(shí)的柵極電荷(Qg):46nC @ 4.5V 不同 Vds 時(shí)的輸入電容(Ciss):8650pF @ 25V 功率 - 最大值:113W 工作溫度:-55°C ~ 150°C(TJ) 安裝類(lèi)型:表面貼裝 封裝/外殼:8-PowerSMD,扁平引線(xiàn) 供應(yīng)商器件封裝:PowerFlat?(5x6) 標(biāo)準(zhǔn)包裝:1