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參數(shù)資料
| 型號： | STGW40NC60V |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 50A - 600V TO-247 Hyper Fast PowerMESH⑩ IGBT |
| 中文描述： | N溝道50A條- 600V到- 247超高速IGBT的PowerMESH⑩ |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 319K |
| 代理商： | STGW40NC60V |
STGW40NC60V
2/9
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
Collector-Emitter Voltage (V
GS
= 0)
V
ECR
Emitter-Collector Voltage
V
GE
Gate-Emitter Voltage
I
C
Collector Current (continuous) at T
C
= 25°C
I
C
Collector Current (continuous) at T
C
= 100°C
I
CM
( )
Collector Current (pulsed)
P
TOT
Total Dissipation at T
C
Derating Factor
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
( )
Pulse width limited by safe operating area
THERMAL DATA
Rthj-case
Rthj-amb
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
BR(CES)
Collector-Emitter Breakdown
Voltage
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating, T
C
= 125 °C
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
ON (1)
Symbol
V
GE(th)
V
CE(sat)
Parameter
Value
Unit
600
V
20
V
± 20
V
80
A
50
A
220
A
260
W
2.6
W/°C
– 55 to 125
°C
125
°C
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
0.385
30
°C/W
°C/W
Test Conditions
I
C
= 1 mA, V
GE
= 0
Min.
600
Typ.
Max.
Unit
V
V
CE
= Max Rating, T
C
= 25 °C
250
μA
1000
μA
V
GE
= ±20 V , V
CE
= 0
±250
nA
Parameter
Test Conditions
V
CE
= V
GE
, I
C
= 250 μA
V
GE
= 15 V, I
C
= 40 A, Tj =25°C
V
GE
=15 V, I
C
= 40 A, Tj =125°C
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
3
4
5
V
Collector-Emitter Saturation
Voltage
1.92
2.5
V
1.7
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STGY40NC60V | Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:220uF; Capacitance Tolerance:+/- 20%; ESR:0.4ohm; Operating Temp. Max:105 C; Operating Temp. Min:-55 C RoHS Compliant: Yes |
| STGY40NC60VD | N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH?? IGBT |
| STH12NA60 | Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin; Termination:Radial Leaded; ESR:30ohm; Lead Pitch:5mm; Operating Temp. Max:70 C RoHS Compliant: Yes |
| STH33N20 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGW40NC60V_04 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT |
| STGW40NC60W | 功能描述:IGBT 晶體管 600volt 40 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGW40NC60WD | 功能描述:IGBT 晶體管 FAST N-CHANNEL RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGW40NC60WD_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:40 A - 600 V - ultra fast IGBT |
| STGW40S120DF3 | 功能描述:IGBT 1200V 40A TO247 制造商:stmicroelectronics 系列:- 包裝:管件 零件狀態(tài):有效 IGBT 類型:溝槽型場截止 電壓 - 集射極擊穿（最大值）:1200V 電流 - 集電極（Ic）（最大值）:80A 脈沖電流 - 集電極 (Icm):160A 不同?Vge，Ic 時的?Vce（on）:2.15V @ 15V，40A 功率 - 最大值:468W 開關(guān)能量:1.43mJ（開），3.83mJ（關(guān)） 輸入類型:標(biāo)準(zhǔn) 柵極電荷:129nC 25°C 時 Td（開/關(guān)）值:35ns/148ns 測試條件:600V，40A，15 歐姆，15V 反向恢復(fù)時間（trr）:355ns 封裝/外殼:TO-247-3 安裝類型:表面貼裝 供應(yīng)商器件封裝:TO-247-3 標(biāo)準(zhǔn)包裝:30 |
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