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參數(shù)資料
| 型號： | STGP12NB60K |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | SHORT CIRCUIT PROOF PowerMESH IGBT |
| 中文描述： | 短路IGBT的證明PowerMESH |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 322K |
| 代理商： | STGP12NB60K |
9/9
STGP12NB60K
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
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previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
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| STGY40NC60V | Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:220uF; Capacitance Tolerance:+/- 20%; ESR:0.4ohm; Operating Temp. Max:105 C; Operating Temp. Min:-55 C RoHS Compliant: Yes |
| STGY40NC60VD | N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH?? IGBT |
| STH12NA60 | Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin; Termination:Radial Leaded; ESR:30ohm; Lead Pitch:5mm; Operating Temp. Max:70 C RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGP12NB60KD | 功能描述:IGBT 晶體管 N-Ch 600 Volt 18 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGP14N60D | 功能描述:IGBT 晶體管 14A 600V SHRT CIR RUGGED IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGP14NC60KD | 功能描述:IGBT 晶體管 PowerMESH" IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGP15H60DF | 制造商:STMicroelectronics 功能描述:Trench gate field-stop IGBT, H series 600 V, 15 A high speed |
| STGP15M65DF2 | 功能描述:TRENCH GATE FIELD-STOP IGBT M SE 制造商:stmicroelectronics 系列:- 包裝:管件 零件狀態(tài):有效 IGBT 類型:溝槽型場截止 電壓 - 集射極擊穿（最大值）:650V 電流 - 集電極（Ic）（最大值）:30A 脈沖電流 - 集電極 (Icm):60A 不同?Vge，Ic 時的?Vce（on）:2V @ 15V，15A 功率 - 最大值:136W 開關(guān)能量:90μJ（開），450μJ（關(guān)） 輸入類型:標(biāo)準(zhǔn) 柵極電荷:45nC 25°C 時 Td（開/關(guān)）值:24ns/93ns 測試條件:400V，15A，12 歐姆，15V 反向恢復(fù)時間（trr）:142ns 封裝/外殼:TO-220-3 安裝類型:通孔 供應(yīng)商器件封裝:TO-220 標(biāo)準(zhǔn)包裝:50 |
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