參數(shù)資料
型號: STGP12NB60K
廠商: 意法半導體
英文描述: SHORT CIRCUIT PROOF PowerMESH IGBT
中文描述: 短路IGBT的證明PowerMESH
文件頁數(shù): 2/9頁
文件大?。?/td> 322K
代理商: STGP12NB60K
STGP12NB60K
2/9
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
Collector-Emitter Voltage (V
GS
= 0)
V
ECR
Emitter-Collector Voltage
V
GE
Gate-Emitter Voltage
I
C
Collector Current (continuous) at T
C
= 25°C (#)
I
C
Collector Current (continuous) at T
C
= 100°C (#)
I
CM
( )
Collector Current (pulsed)
( )
Pulse width limited by safe operating area
THERMAL DATA
Rthj-case
Rthj-amb
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
BR(CES)
Collector-Emitter Breakdown
Voltage
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating, T
C
= 125 °C
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
ON (1)
Symbol
V
GE(th)
V
CE(sat)
DYNAMIC
Symbol
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
I
CL
Parameter
Value
Unit
600
V
20
V
± 20
V
30
A
18
A
60
A
μ
s
W
Tsc
Short Circuit Withstand
10
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
125
1.0
W/°C
T
stg
T
j
Storage Temperature
–65 to 150
°C
Max. Operating Junction Temperature
150
°C
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.0
62.5
°C/W
°C/W
Test Conditions
I
C
= 250 μA, V
GE
= 0
Min.
600
Typ.
Max.
Unit
V
V
CE
= Max Rating, T
C
= 25 °C
50
100
μA
μA
V
GE
= ± 20V , V
CE
= 0
±100
nA
Parameter
Test Conditions
V
CE
= V
GE
, I
C
= 250 μA
V
GE
= 15V, I
C
= 12 A
V
GE
= 15V, I
C
= 12 A, Tj =125°C
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
5
7
V
Collector-Emitter Saturation
Voltage
2.2
1.7
2.8
V
V
Parameter
Test Conditions
V
CE
= 25 V
,
I
C
= 12 A
V
CE
= 25V, f = 1 MHz, V
GE
= 0
Min.
Typ.
Max.
Unit
Forward Transconductance
5
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
890
110
22
pF
pF
pF
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 480V, I
C
= 12 A,
V
GE
= 15V
54
8
31
nC
nC
nC
Latching Current
V
clamp
= 480 V , V
GE
=15V
,
Tj = 125°C , R
G
= 10
V
CE
= 0.5 BV
ces ,
V
GE
= 15 V
Tj = 125°C , R
G
= 10
48
A
T
wsc
Short Circuit WITHSTAND
Time
10
μs
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